2000 Oct 17 3
Philips Semiconductors Product specification
UHF amplifier module BGY2016
CHARACTERISTICS
Tmb =25°C; VS1 =5V; V
S2 = 26 V; PL=16 W; ZS=Z
L=50 unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency 1805 1990 MHz
IS1 supply current 80 mA
IS2 supply current PD<60 dBm 430 mA
PLload power PD<20mW 16 −−W
G
ppower gain 28 35 dB
Gpin band gain variation f = 1805 to 1880 MHz; PL=5W −−2dB
f = 1930 to 1990 MHz; PL=5W −−2dB
G
p1 -G
p2gain expansion Gp1 at PL= 160 mW;
Gp2 at PL=5mW
−−±1dB
ηefficiency PL=16W 30 −−%
H
2second harmonic PL=16W −−−35 dBc
H3third harmonic PL=16W −−−40 dBc
VSWRin input VSWR −−2:1
stability VSWR 2 : 1 through all phases;
PL16 W; VS2 =25to27V
−−−60 dBc
reverse intermodulation Pcarrier = 16 W; Preverse=40 dBc;
fi=f
c±200 kHz
−−−53 dBc
B AM bandwidth corner frequency=3dB;
P
carrier = 16 W; modulation = 20% 2−−MHz
ruggedness VSWR 5 : 1 through all phases no degradation