Philips 5534A, NE, SE5534 NE/SA/SE5534/5534ASingle low noise operational amplifier

Philips Semiconductors Product data
NE/SA/SE5534/5534ASingle low noise operational amplifier
2001 Aug 03 4
AC ELECTRICAL CHARACTERISTICS
Tamb = 25 °C, VS = ±15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA5534/5534A SE5534/5534A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
ROUT Output resistance AV = 30 dB closed-loop
f = 10 kHz; RL = 600 Ω;
CC = 22 pF 0.3 0.3 Ω
T ransient response Voltage-follower, VIN = 50 mV
RL = 600 Ω; CC = 22 pF,
CL = 100 pF
tRRise time 20 20 ns
Overshoot 20 20 %
Transient res
p
onse
VIN = 50 mV, RL = 600 Ω
Transient
res onse
CC = 47 pF, CL = 500 pF
tRRise time 50 50 ns
Overshoot 35 35 %
AVGain f = 10 kHz, CC = 0 6 6 V/mV
f = 10 kHz, CC = 22 pF 2.2 2.2 V/mV
GBW Gain bandwidth product CC = 22 pF, CL = 100 pF 10 10 MHz
SR
Slew rate
CC = 0 13 13 V/µs
SR
Slew
rate
CC = 22 pF 6 6 V/µs
VOUT = ±10 V, CC = 0 pF 200 200 kHz
Power bandwidth
VOUT = ±10 V, CC = 22 pF 95 95 kHz
Power
bandwidth
VOUT = ±14 V, RL = 600 Ω70 70 kHz
CC = 22 pF, VCC = ±18 V
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C, VS = 15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA/SE5534 NE/SA/SE5534A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
VNOISE
In
p
ut noise voltage
fO = 30 Hz 7 5.5 7 nV/√Hz
VNOISE
In ut
noise
voltage
fO = 1 kHz 4 3.5 4.5 nV/√Hz
INOISE
In
p
ut noise current
fO = 30 Hz 2.5 1.5 pA/√Hz
INOISE
In ut
noise
current
fO = 1 kHz 0.6 0.4 pA/√Hz
Broadband noise figure f = 10 Hz to 20 kHz; RS = 5 kΩ0.9 dB
Channel separation f = 1 kHz; RS = 5 kΩ110 110 dB