1999 Apr 22 2
Philips Semiconductors Product specification
NPN general purpose transistors PMST6428; PMST6429
FEATURES
•Low current (max. 100 mA)
•Low voltage (max. 50 V).
APPLICATIONS
•General purpose switching and amplification in e.g.
telephony and professional communication equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
MARKING
Note
1. ∗= - : Made in Hong Kong.
∗= t : Made in Malaysia.
TYPE NUMBER MARKING CODE(1)
PMST6428 ∗1K
PMST6429 ∗1L
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
PMST6428 −60 V
PMST6429 −55 V
VCEO collector-emitter voltage open base
PMST6428 −50 V
PMST6429 −45 V
VEBO emitter-base voltage open collector −6V
I
Ccollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb≤25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C