Philips PMST6428, PMST6429 NPN general purpose transistors PMST6428; PMST6429

1999 Apr 22 3

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors PMST6428; PMST6429

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb ≤25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rthj-a thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =30V −10 nA

IE= 0; VCB =30V; T

j= 150 °C−10 µA

IEBO emitter cut-off current IC= 0; VEB =5V −10 nA

hFE DC current gain VCE =5V

PMST6428 IC= 0.01 mA 250 −

IC= 0.1 mA 250 650

IC= 1 mA 250 −

IC= 10 mA 250 −

DC current gain VCE =5V

PMST6429 IC= 0.01 mA 500 −

IC= 0.1 mA 500 1250

IC= 1 mA 500 −

IC= 10 mA 500 −

VCEsat collector-emitter saturation

voltage IC= 10 mA; IB= 0.5 mA; note 1 −200 mV

IC= 100 mA; IB= 5 mA; note 1 −600 mV

VBE base-emitter voltage IC= 1 mA; VCE = 5 V 560 660 mV

Cccollector capacitance IE=i

e= 0; VCB = 10 V; f= 1 MHz −3pF

eemitter capacitance IC=i

c= 0; VEB = 0.5 V; f= 1 MHz −12 pF

fTtransition frequency IC= 1 mA; VCE = 5 V; f= 100 MHz 100 700 MHz