Philips Semiconductors Product specification
PTN3501Maintenance and control device
2001 Jan 17 10
ABSOLUTE MAXIMUM RATINGSAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
SYMBOL PARAMETER MIN MAX UNIT
VCC Supply Voltage –0.5 4.0 V
VIInput Voltage VSS – 0.5 5.5 V
IIDC Input Current –20 20 mA
IODC Output Current –25 25 mA
IDD Supply Current –100 100 mA
ISS Supply Current –100 100 mA
Ptot Total Power Dissipation – 400 mW
POTotal Power Dissipation per Output – 100 mW
TSTG Storage Temperature –65 +150 _C
TAMB Operating Temperature –40 +85 _C
VESD Electrostatic Discharge:
Human Body Model, 1.5 kΩ, 100 pF – >2000 V
Machine Model, 0 Ω, 200 pF – >200 V
DC ELECTRICAL CHARACTERISTICSTamb = –40_C to +85_C unless otherwise specified; VCC = 3.3 V
SYMBOL PARAMETER MIN TYP MAX UNIT
Supply
VDD Supply Voltage 2.5 3.3 3.6 V
IDDQ Standby Current; A0 thru A5, WC = HIGH – 60 µA
IDD1 Supply Current Read – – 1 mA
IDD2 Supply Current Write – – 2 mA
VPOR Power on Reset Voltage – – 2.4 V
Input SCL; input, output SDA
VIL Input LOW voltage –0.5 –0.3 VDD V
VIH Input HIGH voltage 0.7 VDD – 5.5 V
IOL Output LOW current @ VOL = 0.4 V 3 – – mA
ILInput leakage current @ VI = VDD or VSS –1 – 1 µA
CIInput capacitance @ VI = VSS – – 7 pF
I/O Expander Port
VIL Input LOW voltage –0.5 –0.3 VDD V
VIH Input HIGH voltage 0.7 VDD – 5.5 V
IIHL(max) Input current through protection diodes –400 – 400 µA
IOL Output LOW current @ VOL = 1 V 10 25 – mA
IOH Output HIGH current @ VOH = Vss 30 100 300 µA
IOHt Transient pull–up current – 2 – mA
CIInput Capacitance – – 10 pF
COOutput Capacitance – – 10 pF
Address Inputs A0 thru A5, WC input
VIL Input LOW voltage –0.5 –0.3 VDD V
VIH Input HIGH voltage 0.7 VDD – 5.5 V
ILInput leakage current @ VI = VDD –1 – 1 µA
Input leakage (pull-up) current @ VI = VSS 10 25 100 µA
Interrupt output INT
IOL Low level output current; VOL = 0.4 V 1.6 – – mA
ILLeakage current @ VI = VDD or VSS –1 – +1 µA