Philips Semiconductors Product specification
SA5205AWide-band high-frequency amplifier
1997 Nov 07 4

DC ELECTRICAL CHARACTERISTICS

VCC=6V, ZS=ZL=ZO=50 and TA=25°C in all packages, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5205A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
VCC Operating supply voltage range Over temperature 5
58
8V
V
ICC Supply current Over temperature 20
19 25
25 32
33 mA
mA
S21 Insertion gain f=100MHz
Over temperature 17
16.5 19 21
21.5 dB
S11
In
p
ut return loss
f=100MHz 25
dB
S11
Inp
u
t
ret
u
rn
loss
DC - fMAX 12
dB
S22
Out
p
ut return loss
f=100MHz 27
dB
S22
O
u
tp
u
t
ret
u
rn
loss
DC - fMAX 12
dB
S12
Isolation
f=100MHz -25
dB
S12
Isolation
DC - fMAX -18
dB
tRRise time 500 ps
tPPropagation delay 500 ps
BW Bandwidth ±0.5dB 450 MHz
fMAX Bandwidth -3dB 550 MHz
Noise figure (75) f=100MHz 4.8 dB
Noise figure (50) f=100MHz 6.0 dB
Saturated output power f=100MHz +7.0 dBm
1dB gain compression f=100MHz +4.0 dBm
Third-order intermodulation
intercept (output) f=100MHz +17 dBm
Second-order intermodulation
intercept (output) f=100MHz +24 dBm