Philips SA5211 Fig 6. Test circuit 8.

Philips Semiconductors SA5211
Transimpedance amplifier (180 MHz)
Product specification Rev. 03 — 07 October 1998 9 of 28
9397 750 07427 © Philips Electronics N.V. 2001. All rights reserved.
Fig 6. Test circuit 8.
GND2
Test Circuit 8
OUT +
OUT –
GND1
IN DUT
IIN (µA)
5V
VOUT (V)
+
–
Typical Differential Output Voltage
vs Current Input
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–100 –80 –60 –40 –20 0 20 40 60 80 100
DIFFERENTIAL OUTPUT VOLTAGE (V)
CURRENT INPUT (µA)
NE5211 TEST CONDITIONS
Procedure 1 RT measured at 15µA
RT = (VO1 – VO2)/(+15µA – (–15µA))
Where: VO1 Measured at IIN = +15µA
VO2 Measured at IIN = –15µA
Procedure 2 Linearity = 1 – ABS((VOA – VOB) / (VO3 – VO4))
Where: VO3 Measured at IIN = +30µA
VO4 Measured at IIN = –30µA
Procedure 3 VOMAX = VO7 – VO8
Where: VO7 Measured at IIN = +65µA
VO8 Measured at IIN = –65µA
Procedure 4 IIN Test Pass Conditions:
VO7 – VO5 > 20mV and V06 – VO5 > 50mV
Where: VO5 Measured at IIN = +40µA
VO6 Measured at IIN = –400µA
VO7 Measured at IIN = +65µA
VO8 Measured at IIN = –65µA
SD00331
VOB = RT × (– 30 µA) + VOB
VOA = RT × (+ 30 µA) + VOB