2003 Feb 12 10
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility TDA1562Q; TDA1562ST;
TDA1562SD
QUALITY SPECIFICATION
Quality in accordance with

“SNW-FQ-611D”

, if this type is used as an audio amplifier.
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
VP= 14.4 V; RL=4; Tamb =25°C; measurements in accordance with Fig.9; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-c) thermal resistance from junction to case 1.5 K/W
Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies VP1 and VP2
VPsupply voltage 8 14.4 18 V
VP(th+) supply threshold voltage mute on 7 9V
V
P(th−) supply threshold voltage on mute 7 9V
V
P(H1) hysteresis (Vth+ Vth)−200 mV
Iqquiescent current on and mute;
RL= open circuit 110 150 mA
Istb standby current standby 350µA
Amplifier outputs OUT+ and OUT
VOoutput voltage on and mute 6.5 V
VOOoutput offset voltage on and mute −−100 mV
∆VOOdelta output offset voltage on mute −−30 mV
Mode select input MODE
VIinput voltage 0 VPV
IIinput current VMODE = 14.4 V 15 20 µA
Vth1+ threshold voltage 1+ standby mute 1 2.2 V
Vth1threshold voltage 1mute standby 0.9 2V
V
msH1 hysteresis (Vth1+ Vth1)−200 mV
Vth2+ threshold voltage 2+ mute on 3.3 4.2 V
Vth2threshold voltage 2on mute 3.3 4V
V
msH2 hysteresis (Vth2+ Vth2)−200 mV
Status I/O STAT
PIN STAT AS INPUT
Vst input voltage 0 VPV
Ist(H) HIGH-level input current VSTAT = 14.4 V 3.5 4.5 mA
Ist(L) LOW-level input current VSTAT =0V −−350 400 µA
Vth1+ threshold voltage 1+ fast mute class-B −−2V
V
th1threshold voltage 1class-B fast mute 1 −−V
V
stH1 hysteresis (Vth1+ Vth1)−200 mV