2002 Mar 05 9
Philips Semiconductors Product specification
4×40 W BTL quad car radio power
amplifier TDA8571J
ACCHARACTERISTICS
VP= 14.4V; RL=4Ω; f= 1kHz; Tamb =25°C; measured in Fig.7; unless otherwise specified.
Notes
1. Dynamic Distortion Detector (DDD) active, pin VDIAG is set to LOW level.
2. Frequency response externally fixed.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD = 0.5% 16 19 −W
THD = 10% 21 26 −W
VP= 13.7V; THD =0.5% −17.5 −W
VP= 13.7V; THD =10% −23 −W
Po(EIAJ) EIAJ output power THD =maximum; Vi=2 V (p-p)
square wave 35 40 −W
Po(max) maximum output power THD = maximum; VP=15.2 V;
Vi= 2V (p-p) square wave 40 45 −W
THD total harmonic distortion Po=1W −0.1 −%
VMODE =0.6 V; note1 −10 −%
Bppower bandwidth THD =0.5%; Po=−1 dB with
respect to 16 W
−20 to
20000
−Hz
fro(l) low frequency roll-off at −1dB; note 2 −25 −Hz
fro(h) high frequency roll-off at −1dB 20 −−kHz
Gv(cl) closed-loop voltage gain 33 34 35 dB
SVRR supply voltage ripple rejection Rs=0Ω; maximum ripple
Vripple = 2 V (p-p)
on 40 −−dB
mute 50 −−dB
standby 80 −−dB
Ziinput impedance 25 30 38 kΩ
Vn(o) noise output voltage B= 20 Hzto 20 kHz
on; Rs=0Ω−125 170 µV
on; Rs=10kΩ−150 −µV
mute; independent of Rs−100 −µV
α
cs channel separation Po= 16W; Rs=10kΩ45 −−dB
∆Gvchannel unbalance −−1dB
V
ooutput signal in mute maximum input voltage
Vi= 1 V (RMS)
−−2mV