Renesas 2SK3069 manual

Rev.11.00 Sep 07, 2005 page 1 of 7

2SK3069

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1062-1100

(Previous: ADE-208-694I)

Rev.11.00

Sep 07, 2005

Features

• Low on-resistance

RDS(on) = 6 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB)

1. Gate

2. Drain

(Flange

)

3. Source

123

Contents

Main 2SK3069 Silicon N Channel MOS FET High Speed Power Switching Features Outline 2SK3069 Absolute Maximum Ratings (Ta = 25C) Electrical Characteristics (Ta = 25C) Main Characteristics (m) (A) V Drain to Source Saturation Voltage Case Temperature T (C) (A) (V) Gate to Source Voltage V Rev.11.00 Sep 07, 2005 page 5 of 7 (mJ) Avalanche Test Circuit Avalanche Waveform (A) 2SK3069 Switching Time Test Circuit Switching Time Waveforms Package Dimensions Ordering Information http://www.renesas.com RENESAS SALES OFFICES 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.