2SK3069
Rev.11.00 Sep 07, 2005 page 2 of 7
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 75 A
Drain peak current ID(pulse) Note 1 300 A
Body-drain diode reverse drain current IDR 75 A
Avalanche current IAP Note 3 50 A
Avalanche energy EAR Note 3 214 mJ
Channel dissipation Pch Note 2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 4
— 6.0 7.5 mΩ I
D = 40 A, VGS = 10 V Note 4
Static drain to source on state
resistance
RDS(on)
— 8.0 12 mΩ I
D = 40 A, VGS = 4 V Note 4
Forward transfer admittance |yfs| 50 80 — S ID = 40 A, VDS = 10 V Note 4
Input capacitance Ciss — 7100 — pF
Output capacitance Coss — 1000 — pF
Reverse transfer capacitance Crss — 280 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge Qg — 125 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 25 — nC
VDD = 25 V, VGS = 10 V,
ID = 75 A
Turn-on delay time td(on) — 60 — ns
Rise time tr — 300 — ns
Turn-off delay time td(off) — 520 — ns
Fall time tf — 330 — ns
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω
Body–drain diode forward voltage VDF — 1.05 — V IF = 75A, VGS = 0
Body–drain diode reverse recovery
time
trr — 90 — ns
IF = 75A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test