Renesas 2SK3069 Case Temperature T, (C), (A), Gate Charge Qg (nc), (V), (A), Static Drain to Source on State Resistance vs. Temperature, (A), Forward Transfer Admittance vs. Drain Current, Drain Current I, Body to Drain Diode Reverse Recovery Time, Reverse Drain Current I, Typical Capacitance vs. Drain to Source Voltage, Drain to Source Voltage V, Dynamic Input Characteristics, Switching Characteristics, Drain Current I

2SK3069
Rev.11.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR (A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D (A)
20
16
12
8
4
–50 0 50 100 150 200
0
V
GS
= 10 V
4 V
Pulse Test
10, 20, 50 A
I
D
= 50 A
10 A
20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25°C
75°C
25°C
V
DS
= 10 V
Pulse Test
0.1 0.3 1 3 10 30 100 01020304050
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2 210 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
300
20
1
100
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 75 A
V
GS
V
DS
V
DD
= 50 V
25 V
10 V
V
DD
= 50 V
25 V
10 V
0.5 5
500
50
50
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
tr
td(on)
td(off)
tf
30000