Renesas 3SK318 manual

Rev.2.00 Aug 10, 2005 page 1 of 7

3SK318

Silicon N-Channel Dual Gate MOS FET

UHF RF Amplifier

REJ03G0819-0200

(Previous ADE-208-600)

Rev.2.00

Aug.10.2005

Features

• Low noise characteristics;

(NF= 1.4 dB typ. at f= 900 MHz)

• Excellent cross modulation characteristics

• Capable low voltage operation; +B= 5V

Outline

1. Source

2. Gate1

3. Gate2

4. Drain

RENESAS Package code: PTSP0004ZA-A

(Package name:

CMPAK-4)

Note: Marking is “YB–“.

Contents

Main 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier Features Outline 3SK318 Absolute Maximum Ratings (Ta = 25C) Electrical Characteristics (Ta = 25C) 3SK318 Rev.2.00 Aug 10, 2005 page 3 of 7 Channel Power Dissipation Pch (mW) Power Gain vs. Drain Current Rev.2.00 Aug 10, 2005 page 4 of 7 (mA) (V) Drain Current I Rev.2.00 Aug 10, 2005 page 5 of 7 S11 Parameter vs. Frequency S21 Parameter vs. Frequency S12 Parameter vs. Frequency S22 Parameter vs. Frequency 3SK318 S Parameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50) Rev.2.00 Aug 10, 2005 page 7 of 7 Package Dimensions Ordering Information http://www.renesas.com RENESAS SALES OFFICES 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.