3SK318
Rev.2.00 Aug 10, 2005 page 2 of 7
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDS 6 V
Gate1 to source voltage VG1S ±6 V
Gate2 to source voltage VG2S ±6 V
Drain current ID 20 mA
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 µA, VG1S = VG2S = 0
Gate1 to source breakdown voltage V(BR)G1SS ±6 — — V IG1 = ±10 µA, VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS ±6 — — V IG2 = ±10 µA, VG1S = VDS = 0
Gate1 to source cutoff current IG1SS — — ±100 nA VG1S = ±5 V, VG2S = VDS = 0
Gate2 to source cutoff current IG2SS — — ±100 nA VG2S = ±5 V, VG1S = VDS = 0
Gate1 to source cutoff voltage VG1S(off) 0.5 0.7 1.0 V
VDS = 5 V, VG2S = 3 V
ID = 100µA
Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V
VDS = 5 V, VG1S = 3 V
ID = 100 µA
Drain current IDS(op) 0.5 4 10 mA
VDS = 3.5 V, VG1S = 1.1 V
VG2S = 3 V
Forward transfer admittance |yfs| 18 24 32 mS
VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f = 1 kHz
Input capacitance Ciss 1.3 1.6 1.9 pF
Output capacitance Coss 0.9 1.2 1.5 pF
Reverse transfer capacitance Crss — 0.019 0.03 pF
VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f= 1 MHz
Power gain PG 18 21 — dB
Noise figure NF — 1.4 2.2 dB
VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f = 900 MHz