3SK318

Rev.2.00 Aug 10, 2005 page 3 of 7

200
150
100
50
050 100 150 200
Channel Power Dissipation Pch (mW)

Ambient Temperature Ta (°C)

Maximum Channel Power

Dissipation Curve

02468
10
V
G2S = 3 V

Drain to Source Voltage V

DS

(V)

Drain Current I
D
(mA)

Typical Output Characteristics

4
8
12
16
20
0.9 V
1.0 V
1.1 V
1.2 V
1.3 V
1.6 V
1.5 V
1.4 V
V
G1S = 1.7 V
0.8 V
20
16
12
8
4
012 345
Drain Current I
D
(mA)

Gate1 to Source Voltage V

G1S

(V)

Drain Current vs.

Gate1 to Source Voltage

V
DS = 3.5 V
2.0 V
2.5 V
1.5 V
VG2S = 1.0 V
20
16
12
8
4
012345
Drain Current I
D
(mA)

Gate2 to Source Voltage V

G2S

(V)

Drain Current vs.

Gate2 to Source Voltage

V
DS = 3.5 V
VG1S = 1.0 V
1.2 V
1.4 V
1.6 V
1.8 V
2.0 V
25
20
15
10
5
05101520
25
30
24
18
12
6
00.4 0.8 1.2 1.6 2.0
VG2S = 3 V
1 V
2 V
Forward Transfer Admittance |y
fS
| (mS)

Gate1 to Source Voltage V

G1S

(V)

Power Gain PG (dB)

Drain Current I

D

(mA)

Power Gain vs. Drain Current

Forward Transfer Admittance

vs. Gate1 Voltage

V
DS = 3.5 V
1.5 V
2.5 V
VDS = 3.5 V
VG2S = 3 V
f = 900 MHz