Renesas HSG2005 manual

Rev.4.00 Jun 21, 2006 page 1 of 12

HSG2005

SiGe HBT

High Frequency Medium Power Amplifier

REJ03G0485-0400

Rev.4.00

Jun 21, 2006

Features

• High Transition Frequency

fT = 28.5 GHz typ.

• Low Distortion and Excellent Linearity

P1dB at output = +21 dBm typ. f = 5.8 GHz

• High Collector to Emitter Voltage

VCEO = 5 V

• Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.

Outline

Renesas Package code: PWQN0008ZA-A

(Package name: HWQFN-8 <TNP-8TV>)

1. Collecto

r

2. Collecto

r

3. Collecto

r

4. Emitter

5. Emitter

6. Base

7. Emitter

8. Emitter

9. Emitter

1

3

7

6

5

2

4

8

9

13

765

2

4

8

9

2005

Note: Marking is “2005”.

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage VCBO 12 V

Collector to emitter voltage VCEO 5 V

Emitter to base voltage VEBO 1.2 V

Collector current IC 400 mA

Collector power dissipation Pc 1.2Note W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Note: Value on PCB (40 x 40 x 1.0 mm)

Contents

Main HSG2005 SiGe HBT High Frequency Medium Power Amplifier Features Outline Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) Main Characteristics Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) Collector Current IC (mA) S21 Parameter Transition Frequency fT (GHz) Reverse Transfer Capacitanse Cre (pF) Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) Rev.4.00 Jun 21, 2006 page 4 of 12 2.4 GHz Characteristics / IMD3 (dBm) P Output Power P Frequency f (GHz) 5.8 GHz Characteristics P S parameter vs. Frequency Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 6 of 12 Page Page HSG2005 (VCE = 3 V, IC = 100 mA, Zo = 50 ) HSG2005 (VCE = 3.3 V, IC = 100 mA, Zo = 50 ) HSG2005 (VCE = 3.6 V, IC = 100 mA, Zo = 50 ) Rev.4.00 Jun 21, 2006 page 12 of 12 Package Dimensions Ordering Information http://www.renesas.com RENESAS SALES OFFICES 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.