Renesas HSG2005 5.8 GHz Characteristics

HSG2005
Rev.4.00 Jun 21, 2006 page 5 of 12
5.8 GHz Characteristics
Input Power Pin (dBm)
10
0
5
15
20
5
25
15 2010
P
in
- P
out
Characteristics
I
op
(mA)
OUT
IN
0.5 pF
*1 µF
*1 µF
0.2 pF
1000 pF
27 Ω
2 pF
2 pF
VCC
VBB : Bias Control
1000 pF
0.4 pF
0.5 pF
10 pF 10 pF
Evaluation Board Circuit
Pin - Pout Characteristics
0
-10
-30
0
-20
10
57864
Frequency f (GHz)
S parameter (dB)
S parameter vs. Frequency
-20
0
20
-40
40
-40 0 40-20-60
Input Power P
in
(dBm)
3rd. Order Intermodulation Distortion (IMD3)
-50 20
-30
-10
10
30
V
CE
= 3.6 V
I
idle = 100 mA
f = 5.8 GHz
Fundamental
(1tone)
IMD3
(2tone: ∆f = 1MHz)
100
0
150
200
50
250
P
out
I
op
PG
V
CC
= 3.6 V
I
idle = 100 mA
f = 5.8 GHz
Output Power P
out
(dBm)
Power Gain PG (dB)
-10
-30
0
-20
10
57864
Frequency f (GHz)
S parameter (dB)
S parameter vs. Frequency
P
out
/ IMD3 (dBm)
VCE = 3.6 V
IC = 100 mA
S21
S11
S22
S12
S21
S22
S12
S11
V
CE
= 3.6 V
I
C = 150 mA