Renesas HSG2005 Electrical Characteristics , Main Characteristics

HSG2005
Rev.4.00 Jun 21, 2006 page 2 of 12
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
DC current transfer ratio hFE 150 220 300  V
CE = 3 V, IC = 100 mA
Reverse Transfer Capacitanc e Cre   0.4 pF
VCB = 3 V, IE = 0, f = 1 MHz,
emitter grounded
Transition Freq uency fT  28.5  GHz
VCE = 3 V, IC = 100 mA,
f = 1 GHz
Maximum Stable Gain MSG 10.5 12.5  dB
VCE = 3 V, IC = 100 mA,
f = 5.8 GHz
Maximum Available Gain MAG  17.0  dB
VCE = 3 V, IC = 100 mA,
f = 2.4 GHz
Maximum Available Gain MAG  9.0  dB
VCE = 3 V, IC = 100 mA,
f = 5.8 GHz
Power Gain PG  8.0  dB
VCE = 3.6 V, Iidle = 100 mA,
f = 5.8 GHz, Pin = +13 dBm
1dB Compression Point at out put P1dB  +21  dBm
VCE = 3.6 V, Iidle = 100 mA,
f = 5.8 GHz
Saturation Output Power Po(sat)  +23  dBm
VCE = 3.6 V, Iidle = 100 mA,
f = 5.8 GHz, Pin = +13 dBm
Main Characteristics
0 50 100 150 20
0
Collector Power Dissipation Pc* (mW)
Collector Power Dissipation Curve
Ambient Temperature Ta (°C)
1800
1200
600
*(4 x 4 x 1mm) on PCB