APPENDIX

Technical Specifications

Model

Power Source

Power Consumption

Microwave

Outer Power

Operating Frequency

Magnetron

Cooling Method

Dimensions (W x H x D)

Outside

Oven Cavity

Volume

Weight

Net

M198SCE

240 V ~ 50 Hz

1450 W

100 W / 1000 W (IEC-705)

2450 MHz

OM75P(31)

Cooling Fan Motor

517 x 297 x 379 mm

336 x 241 x 349 mm

28 Liter

16 kg approx

M1D8SCE

240 V ~ 50 Hz

1450 W

100 W / 1000 W (IEC-705)

2450 MHz

OM75P(31)

Cooling Fan Motor

556 x 313 x 423 mm

375 x 251 x 392 mm

37 Liter

18.5 kg approx

26APPENDIX

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Samsung M198SCE, M1D8SCE Model Power Source Power Consumption, Microwave, Outside Oven Cavity, Volume Weight, Net

M1D8SCE, M198SCE specifications

The Samsung M1D8SCE and M198SCE are standout memory solutions from a well-renowned leader in the semiconductor industry. Known for their high performance and reliability, these DRAM modules cater to a wide range of applications, including personal computing, gaming, and server environments.

Both M1D8SCE and M198SCE models are built using advanced manufacturing processes and technology, ensuring that they meet the demanding performance requirements of modern computing tasks. One of the key features of these memory modules is their compatibility with the latest DDR4 standards, providing enhanced data transfer rates and improved power efficiency. With a typical speed of 2400 MHz, users can expect reduced latency and increased bandwidth, which significantly improves overall system responsiveness and performance.

The M1D8SCE is particularly noted for its capacity to support dual-channel configurations, enhancing data flow between the memory and the CPU. This enables smoother multitasking and improved performance in memory-intensive applications such as video editing and 3D rendering. On the other hand, the M198SCE version targets high-capacity requirements with options that can reach up to 16GB per module, making it suitable for advanced gaming rigs and professional workstations.

Both models leverage Samsung's proprietary 3D NAND technology, which not only contributes to higher storage density but also enhances reliability and longevity. This technology minimizes the risk of data loss and corruption, critical for data-heavy operations. Additionally, the energy efficiency of these modules, with a typical operating voltage of just 1.2V, contributes to lower overall power consumption, making them an eco-friendly choice.

Furthermore, these memory modules are designed with thermal management in mind. The advanced heat spreader design aids in better heat dissipation, thereby ensuring stable performance even under heavy loads, which is essential for gamers and high-performance computing.

Overall, the Samsung M1D8SCE and M198SCE DRAM modules stand out in the market due to their cutting-edge technologies, robust performance characteristics, and reliability, making them an excellent choice for users looking to upgrade or build high-performance systems. With a clear focus on innovation and quality, Samsung continues to set benchmarks in the memory technology landscape.