Transcend Information TS2GUSD-P3 manual Bus Operating Conditions, General, Power Supply Voltage

TS2GUSD-P3					2GB microSD Card + Reader P3
Bus Operating Conditions
• General
Parameter	Symbol		Min.	Max.	Unit	Remark
Peak voltage on all lines		-0.3		VDD+0.3	V
All Inputs
Input Leakage Current			-10	10	µA
All Outputs
Output Leakage Current			-10	10	µA
• Power Supply Voltage
Parameter	Symbol		Min.	Max.	Unit	Remark
Supply voltage	VDD	2.0		3.6	V	CMD0, 15,55,ACMD41
						commands
Supply voltage specified in OCR register						Except CMD0, 15,55,
						ACMD41 commands
Supply voltage differentials (VSS1, VSS2)		-0.3		0.3	V
Power up time				250	ms	From 0v to VDD Min.

Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.

•Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:

Parameter	Symbol	Min.	Max.	Unit		Remark
Bus signal line capacitance	CL		100	pF	fPP ≤ 20	MHz, 7 cards
Single card capacitance	CCARD		10	pF
Maximum signal line inductance			16	nH	fPP ≤ 20	MHz
Pull-up resistance inside card (pin1)	RDAT3	10	90	KΩ	May be used for card
					detection

Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host.

Parameter	Symbol	Min.	Max.	Unit	Remark
Pull-up resistance	RCMD, RDAT	10	100	KΩ	To prevent bus floating
Bus signal line capacitance	CL		250	pF	fPP ≤ 5 MHz, 21 cards

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