T
T
TS
S
S4
4
4G
G
G-
-
-1
1
16
6
6G
G
GS
S
SD
D
DH
H
HC
C
C6
6
6-
-
-S
S
S5
5
5W
W
W
SDHC Memory Card + Reader S5
Transcend Information Inc.
3
Bus Operating Conditions
• General
Parameter Symbol Min. Max. Unit Remark
Peak voltage on all lines -0.3 VDD+0.3 V
All Inputs
Input Leakage Current -10 10 µA
All Outputs
Output Leakage Current -10 10 µA
• Power Supply Voltage
Parameter Symbol Min. Max. Unit Remark
Supply voltage VDD 2.7 3.6 V
Output High Voltage VOH 0.75* VDD V IOH=-100uA@VDD Min.
Output Low Voltage VOL 0.125* VDD V IOL=100uA@VDD Min.
Input High Voltage VIH 0.625* VDD VDD+0.3 V
Input Low Voltage VIL VSS-0.3 0.25* VDD V
Power up time 250 ms From 0v to VDD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
‧ Before first command: Maximum 15 mA
‧ During initialization: Maximum 100 mA
‧ Operation in Default Mode: Maximum 100 mA
‧ Operation in High Speed Mode: Maximum 200 mA
‧ Operation with other functions: Maximum 500 mA.
• Bus Signal Line Load
The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus
capacitance CBUS itself and the capacitance CCARD of each card connected to this line:
CL = CHOST + CBUS + Ν*CCARD
Where N is the number of connected cards.
Parameter Symbol Min. Max. Unit Remark
Pull-up resistance RCMD
RDAT
10 100 kΩ To prevent bus floating
Bus signal line capacitance CL 40 pF 1 card
CHOST+CBUS shall not exceed
30 pF