PMC-Sierra Pm25LV010, Pm25LV512 manual Status Register Bits, Level

Page 9

PMC

 

 

 

 

 

 

Pm25LV512/010

 

 

 

 

 

 

 

 

 

Table 5. Block Write Protect Bits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Status Register Bits

 

Pm25LV512

 

Pm25LV010

 

 

 

 

 

 

 

 

 

 

 

 

 

Array Addresses

 

Locked-out

Array Addresses

Locked-out

Level

BP1

BP0

 

Locked Out

 

Block(s)

Locked Out

Block(s)

 

 

 

 

 

 

 

 

 

0

0

0

 

 

 

 

None

None

 

 

 

 

 

 

 

 

 

1(1/4)

0

1

 

None

 

None

018000 - 01FFFF

Block 4

 

 

 

 

 

 

 

 

 

2(1/2)

1

0

 

 

 

 

010000 - 01FFFF

Block 3, 4

 

 

 

 

 

 

 

 

 

3(All)

1

1

 

000000-00FFFF

 

All Blocks

000000 - 01FFFF

All Blocks

 

 

(1 - 2)

(1 - 4)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

The WRSR instruction also allows the user to enable or disable the Write Protect (WP#) pin through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is enabled when the WP# pin is low and the WPEN bit is "1". Hardware write protection is disabled when either the WP# pin is high or the WPEN bit is "0." When the device is hardware write protected, writes to the Status Register, including the Block Protect bits and the WPEN bit, and the locked-out blocks in the memory array are disabled. Write is only allowed to blocks of the memory which are not locked out. The WRSR instruction is self-timed to automatically erase and program BP0, BP1, and WPEN bits. In order to write the status register, the device must first be write enabled via the WREN instruction. Then, the instruction and data for the three bits are entered. During the internal write cycle, all instructions will be ignored except RDSR instructions. The Pm25LV512/010 will automatically return to write disable state at the completion of the WRSR cycle.

Note: When the WPEN bit is hardware write protected, it cannot be changed back to "0", as long as the WP# pin is held low.

Table 6. WPEN Operation

WPEN

WP

WEN

ProtectedBlocks

UnprotectedBlocks

Status Register

 

 

 

 

 

 

0

X

0

Protected

Protected

Protected

 

 

 

 

 

 

0

X

1

Protected

Writable

Writable

 

 

 

 

 

 

1

Low

0

Protected

Protected

Protected

 

 

 

 

 

 

1

Low

1

Protected

Writable

Protected

 

 

 

 

 

 

X

High

0

Protected

Protected

Protected

 

 

 

 

 

 

X

High

1

Protected

Writable

Writable

 

 

 

 

 

 

Programmable Microelectronics Corp.

9

Issue Date: February, 2004, Rev: 1.4

Image 9
Contents General Description FeaturesHardware Data Protection Industrial Standard Pin-out and Package 8-pin Jedec SoicConnection Diagrams PIN DescriptionsPin Soic Contact Wson Product Ordering Information SPI Chip Block Diagram Block DiagramBus Master and SPI Memory Devices Serial Interface DescriptionSPI Modes Serial Interface Description SPI ModesDevice Operation Product Identification DataInstruction Name Instruction Format Hex Code Operation Bit Definition BitPm25LV010 Status Register BitsLevel ProtectedBlocks UnprotectedBlocks Status RegisterA15 A0 A16 A0 Address Pm25LV512 Pm25LV010Block Address Pm25LV512 Block Pm25LV010 Block DC and AC Operating Range Absolute Maximum RatingsPart Number Pm25LV512/010Symbol Parameter Condition Min Typ Max Units DC CharacteristicsSymbol Parameter Min Typ Max Units AC CharacteristicsAC WAVEFORMS1 Typ Max Units Conditions Hold TimingRdid Timing Timing DiagramsWren Timing Wrdi TimingRdsr Timing Wrsr TimingRead Timing Program Timing Fast Read TimingSector Erase Timing Block Erase TimingChip Erase Timing PROGRAM/ERASE Performance Reliability CharacteristicsParameter Unit Typ RemarksPackage Type Information Top View Side View Bottom View Date Revision No Description of Changes Revision History

Pm25LV512, Pm25LV010 specifications

PMC-Sierra is renowned for its high-performance semiconductor solutions, and the PM25LV010 and PM25LV512 are standout products in their lineup of serial NOR flash memory devices. These memory chips are specifically designed for a range of applications that include networking, storage, and consumer electronics, providing reliable performance and efficient data storage.

The PM25LV010 offers 1 megabit of storage capacity, while the PM25LV512 provides 512 kilobits. Both devices feature a simple serial interface that allows for quick and easy connections to various microcontrollers and digital signal processors. This makes them particularly attractive for systems that require fast access to stored data and simplified design architecture.

One of the primary features of the PM25LV010 and PM25LV512 is their high-speed read capability. With access times as low as 45 nanoseconds, these chips enable rapid data retrieval, ensuring that systems can operate effectively without bottlenecks caused by slow memory access. This is particularly crucial in applications where real-time data processing is essential, such as in communications systems or digital signal processing.

In terms of technology, both devices utilize advanced CMOS manufacturing processes that enhance their reliability and performance. They offer flexibility in programming and erasing, with full chip erase functionality and the ability to program data on a page basis. This allows for efficient updates to the stored information without the need to erase large sections of memory.

Power efficiency is another critical aspect of the PM25LV010 and PM25LV512. These devices consume very little power during both active and standby modes, making them suitable for battery-operated devices and energy-sensitive applications. Their low power consumption ensures extended operation time, which is a significant advantage in portable consumer electronics.

Additionally, both chips are designed with robust security features that aid in protecting sensitive data from unauthorized access. They support a variety of locking and protection mechanisms, ensuring that critical information remains confidential.

In summary, the PMC-Sierra PM25LV010 and PM25LV512 serial NOR flash memory devices merge high-speed performance, low power consumption, and advanced security, making them excellent choices for diverse applications in the modern digital landscape. Their design and technology cater to the growing demand for efficient, reliable, and secure memory solutions in today's rapidly evolving electronic ecosystems.