PMC-Sierra Pm25LV512, Pm25LV010 manual Hold Timing, Typ Max Units Conditions

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PMC	Pm25LV512/010

AC CHARACTERISTICS (CONTINUED)

HOLD Timing

C E #

tH D

S C K

tH S

tH D

H O L D #

tH S

tH Z

S O

tL Z

PIN CAPACITANCE ( f = 1 MHz, T = 25°C )

	Typ	Max	Units	Conditions

CIN	4	6	pF	VIN = 0 V
COUT	8	12	pF	VOUT = 0 V

Note: These parameters are characterized but not 100% tested.

Programmable Microelectronics Corp.

Issue Date: February, 2004, Rev: 1.4

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Contents Features General DescriptionHardware Data Protection Industrial Standard Pin-out and Package 8-pin Jedec SoicPIN Descriptions Connection DiagramsPin Soic Contact Wson Product Ordering Information Block Diagram SPI Chip Block DiagramSerial Interface Description Bus Master and SPI Memory DevicesSerial Interface Description SPI Modes SPI ModesProduct Identification Data Device OperationInstruction Name Instruction Format Hex Code Operation Bit Bit DefinitionStatus Register Bits Pm25LV010Level ProtectedBlocks UnprotectedBlocks Status RegisterAddress Pm25LV512 Pm25LV010 A15 A0 A16 A0Block Address Pm25LV512 Block Pm25LV010 Block Absolute Maximum Ratings DC and AC Operating RangePart Number Pm25LV512/010DC Characteristics Symbol Parameter Condition Min Typ Max UnitsAC Characteristics Symbol Parameter Min Typ Max UnitsAC WAVEFORMS1 Hold Timing Typ Max Units ConditionsTiming Diagrams Rdid TimingWren Timing Wrdi TimingWrsr Timing Rdsr TimingRead Timing Fast Read Timing Program TimingBlock Erase Timing Sector Erase TimingChip Erase Timing Reliability Characteristics PROGRAM/ERASE PerformanceParameter Unit Typ RemarksPackage Type Information Top View Side View Bottom View Revision History Date Revision No Description of Changes

Pm25LV512, Pm25LV010 specifications

PMC-Sierra is renowned for its high-performance semiconductor solutions, and the PM25LV010 and PM25LV512 are standout products in their lineup of serial NOR flash memory devices. These memory chips are specifically designed for a range of applications that include networking, storage, and consumer electronics, providing reliable performance and efficient data storage.

The PM25LV010 offers 1 megabit of storage capacity, while the PM25LV512 provides 512 kilobits. Both devices feature a simple serial interface that allows for quick and easy connections to various microcontrollers and digital signal processors. This makes them particularly attractive for systems that require fast access to stored data and simplified design architecture.

One of the primary features of the PM25LV010 and PM25LV512 is their high-speed read capability. With access times as low as 45 nanoseconds, these chips enable rapid data retrieval, ensuring that systems can operate effectively without bottlenecks caused by slow memory access. This is particularly crucial in applications where real-time data processing is essential, such as in communications systems or digital signal processing.

In terms of technology, both devices utilize advanced CMOS manufacturing processes that enhance their reliability and performance. They offer flexibility in programming and erasing, with full chip erase functionality and the ability to program data on a page basis. This allows for efficient updates to the stored information without the need to erase large sections of memory.

Power efficiency is another critical aspect of the PM25LV010 and PM25LV512. These devices consume very little power during both active and standby modes, making them suitable for battery-operated devices and energy-sensitive applications. Their low power consumption ensures extended operation time, which is a significant advantage in portable consumer electronics.

Additionally, both chips are designed with robust security features that aid in protecting sensitive data from unauthorized access. They support a variety of locking and protection mechanisms, ensuring that critical information remains confidential.

In summary, the PMC-Sierra PM25LV010 and PM25LV512 serial NOR flash memory devices merge high-speed performance, low power consumption, and advanced security, making them excellent choices for diverse applications in the modern digital landscape. Their design and technology cater to the growing demand for efficient, reliable, and secure memory solutions in today's rapidly evolving electronic ecosystems.