Cypress CY7C107B, CY7C1007B manual Lead 300-Mil Molded SOJ

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CY7C107B

CY7C1007B

28-Lead (300-Mil) Molded SOJ V21

Document #: 38-05030 Rev. **

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© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semico nductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.

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Contents Features Logic Block Diagram Pin ConfigurationFunctional Description Selection GuideOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Capacitance4 7C107B-25 7C107B-35Parameter Description Test Conditions Min Max Parameter Description Test Conditions Max UnitParameter Description Min Max Switching Characteristics5 Over the Operating RangeAC Test Loads and Waveforms Write Cycle No CE Controlled13 Switching WaveformsRead Cycle No Write Cycle No WE Controlled13 High Impedance Data OUT Data UndefinedOrdering Information Package DiagramsTruth Table Lead 300-Mil Molded SOJ REV ECN no Change Description of Change

CY7C1007B, CY7C107B specifications

Cypress Semiconductor's CY7C107B and CY7C1007B are high-performance static random-access memory (SRAM) devices designed for demanding applications that require fast access times, low power consumption, and high reliability. Both of these memory chips are particularly suitable for use in a variety of electronic systems, including telecommunications, networking, industrial automation, and consumer electronics.

The CY7C107B is a 1 megabit SRAM, while the CY7C1007B is a larger 256 kilobit SRAM. They belong to the Cypress family of asynchronous SRAMs, which are known for their ease of integration into existing systems. One of the main features of these devices is their high-speed operation, with access times that can be as low as 10 nanoseconds. This rapid access allows for quick read and write cycles, making them ideal for applications where speed is critical.

Both memory chips are available in a variety of package options, including 28-pin DIP and 32-pin SOP, allowing for flexible use in different system designs. The CY7C107B and CY7C1007B also employ a dual-port architecture, which enhances their functionality by allowing multiple devices or processors to access the memory simultaneously without conflict. This characteristic is especially beneficial in systems requiring high-throughput data handling, such as video processing or high-speed networking.

Power consumption is another significant aspect of these SRAM devices. They are designed to operate efficiently, with low standby current and minimal active power usage. This makes them suitable for battery-powered and energy-sensitive applications, helping to extend the operating life of such devices.

In terms of reliability, the CY7C107B and CY7C1007B are built using advanced CMOS technology, which not only enhances performance but also increases durability and longevity. These SRAMs are capable of withstanding environmental stresses, thus ensuring consistent performance over time. Furthermore, they incorporate built-in data integrity features to protect against soft errors caused by radiation or other disturbances.

Overall, the Cypress CY7C107B and CY7C1007B SRAMs are robust and efficient solutions for high-speed memory needs. Their combination of fast access times, low power consumption, dual-port capabilities, and reliability makes them excellent choices for a wide range of applications in a rapidly evolving tech landscape. With their proven performance in various sectors, these memory chips continue to be a popular choice among engineers and designers seeking reliable memory solutions.
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