Cypress CY7C1007B, CY7C107B Switching Waveforms, Read Cycle No, Write Cycle No CE Controlled13

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CY7C107B

CY7C1007B

Switching Waveforms

Read Cycle No. 1[10, 11]

tRC

ADDRESS

tAA

tOHA

DATA OUT

PREVIOUS DATA VALID

DATA VALID

107-6

Read Cycle No. 2[11, 12]

 

 

 

ADDRESS

 

 

 

 

 

tRC

 

CE

 

 

 

 

tACE

 

 

 

tLZCE

tHZCE

HIGH

DATA OUT

HIGH IMPEDANCE

DATA VALID

IMPEDANCE

 

 

 

tPU

tPD

 

VCC

 

ICC

SUPPLY

50%

 

50%

CURRENT

 

 

ISB

 

 

 

107-7

Write Cycle No. 1 (CE Controlled)[13]

 

 

tWC

 

ADDRESS

 

 

 

 

tSA

tSCE

 

CE

 

 

 

 

tAW

 

tHA

WE

tPWE

 

 

 

 

 

 

 

tSD

tHD

DATA IN

 

DATA VALID

 

DATA OUT

HIGH IMPEDANCE

 

 

 

 

 

107-8

Notes:

9.No input may exceed VCC + 0.5V.

10.Device is continuously selected, CE = VIL.

11.WE is HIGH for read cycle.

12.Address valid prior to or coincident with CE transition LOW.

Document #: 38-05030 Rev. **

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Contents Logic Block Diagram Pin Configuration FeaturesFunctional Description Selection GuideOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings 7C107B-25 7C107B-35 Capacitance4Parameter Description Test Conditions Min Max Parameter Description Test Conditions Max UnitParameter Description Min Max Switching Characteristics5 Over the Operating RangeAC Test Loads and Waveforms Write Cycle No CE Controlled13 Switching WaveformsRead Cycle No High Impedance Data OUT Data Undefined Write Cycle No WE Controlled13Ordering Information Package DiagramsTruth Table Lead 300-Mil Molded SOJ Change Description of Change REV ECN no

CY7C1007B, CY7C107B specifications

Cypress Semiconductor's CY7C107B and CY7C1007B are high-performance static random-access memory (SRAM) devices designed for demanding applications that require fast access times, low power consumption, and high reliability. Both of these memory chips are particularly suitable for use in a variety of electronic systems, including telecommunications, networking, industrial automation, and consumer electronics.

The CY7C107B is a 1 megabit SRAM, while the CY7C1007B is a larger 256 kilobit SRAM. They belong to the Cypress family of asynchronous SRAMs, which are known for their ease of integration into existing systems. One of the main features of these devices is their high-speed operation, with access times that can be as low as 10 nanoseconds. This rapid access allows for quick read and write cycles, making them ideal for applications where speed is critical.

Both memory chips are available in a variety of package options, including 28-pin DIP and 32-pin SOP, allowing for flexible use in different system designs. The CY7C107B and CY7C1007B also employ a dual-port architecture, which enhances their functionality by allowing multiple devices or processors to access the memory simultaneously without conflict. This characteristic is especially beneficial in systems requiring high-throughput data handling, such as video processing or high-speed networking.

Power consumption is another significant aspect of these SRAM devices. They are designed to operate efficiently, with low standby current and minimal active power usage. This makes them suitable for battery-powered and energy-sensitive applications, helping to extend the operating life of such devices.

In terms of reliability, the CY7C107B and CY7C1007B are built using advanced CMOS technology, which not only enhances performance but also increases durability and longevity. These SRAMs are capable of withstanding environmental stresses, thus ensuring consistent performance over time. Furthermore, they incorporate built-in data integrity features to protect against soft errors caused by radiation or other disturbances.

Overall, the Cypress CY7C107B and CY7C1007B SRAMs are robust and efficient solutions for high-speed memory needs. Their combination of fast access times, low power consumption, dual-port capabilities, and reliability makes them excellent choices for a wide range of applications in a rapidly evolving tech landscape. With their proven performance in various sectors, these memory chips continue to be a popular choice among engineers and designers seeking reliable memory solutions.