Cypress STK12C68 manual Features, Functional Description

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STK12C68

64 Kbit (8K x 8) AutoStore nvSRAM

Features

25 ns, 35 ns, and 45 ns access times

Hands off automatic STORE on power down with external 68 µF capacitor

STORE to QuantumTrap™ nonvolatile elements is initiated by software, hardware, or AutoStore™ on power down

RECALL to SRAM initiated by software or power up

Unlimited Read, Write, and Recall cycles

1,000,000 STORE cycles to QuantumTrap

100 year data retention to QuantumTrap

Single 5V+10% operation

Commercial and industrial temperatures

228-pin (330mil) SOIC, 28-pin (300mil) PDIP, 28-pin (600mil) PDIP packages

28-pin (300 mil) CDIP and 28-pad (350 mil) LCC packages

RoHS compliance

Functional Description

The Cypress STK12C68 is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. A hardware STORE is initiated with the HSB pin.

Logic Block Diagram

 

 

 

 

 

 

 

 

 

 

 

 

 

Quantum Trap

 

VCC

VCAP

 

 

 

 

 

 

 

 

 

 

 

 

 

A5

 

 

 

128 X 512

 

POWER

 

 

 

 

 

 

 

 

 

 

 

A6

DECODER

 

 

STORE

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

A7

 

 

RECALL

 

STORE/

 

 

 

 

 

 

 

 

 

 

A8

 

STATIC RAM

 

RECALL

HSB

 

 

 

 

ARRAY

 

 

 

A9

 

 

 

CONTROL

 

 

 

ROW

 

128 X 512

 

 

 

 

 

 

A11

 

 

 

 

 

 

SOFTWARE

 

 

A12

 

 

 

 

 

 

 

A0

- A12

 

 

 

 

 

 

 

DETECT

 

 

 

 

 

 

 

 

DQ0

 

 

COLUMN I/O

 

 

 

 

 

 

DQ1

BUFFERS

 

COLUMN DEC

 

 

 

 

 

 

DQ2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQ3

 

 

 

 

 

 

 

 

 

DQ4

 

 

 

 

 

 

 

 

 

INPUT

 

 

 

 

 

 

 

 

 

DQ5

A0 A1 A2 A3 A4 A10

 

 

 

 

 

 

DQ6

 

 

 

 

 

 

 

 

 

DQ7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

WE

 

Cypress Semiconductor Corporation

198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document Number: 001-51027 Rev. **

 

 

 

 

 

 

Revised January 30, 2009

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Contents Functional Description FeaturesPin Definitions Pin ConfigurationsSram Read Device OperationSram Write AutoStore OperationHardware Recall Power Up AutoStore Inhibit ModeHardware Store HSB Operation Software StoreData Protection Low Average Active PowerNoise Considerations Hardware ProtectA12-A0 Mode Power Hardware Mode SelectionBest Practices Range Ambient Temperature DC Electrical CharacteristicsMaximum Ratings Operating RangeCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsSwitching Waveforms AC Switching CharacteristicsParameter Sram Write Cycle Switching Waveform AutoStore or Power Up RecallParameter Alt Description STK12C68 Unit Min Max HSBParameter Alt Description 25 ns 35 ns 45 ns Unit Min Software Controlled STORE/RECALL CycleHardware Store Cycle Hardware Store CycleOrdering Information Part Numbering nomenclature STK12C68 S F 45 I TRSTK12C68-SF25TR STK12C68-SF25ITRPackage Type Operating Range Speed ns Ordering CodeSTK12C68-SF45TR STK12C68-SF45ITRPin 300 Mil Pdip Pin 330 Mil SoicPin 600 Mil Pdip Pin 300 Mil Side Braze DIL Pad 350 Mil LCC New data sheet Sales, Solutions, and Legal InformationDocument History USB