Cypress CY7C1297H manual Features, Functional Description1, Logic Block Diagram

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CY7C1297H

1-Mbit (64K x 18) Flow-Through Sync SRAM

Features

64K x 18 common I/O

3.3V core power supply (VDD)

2.5V/3.3V I/O power supply (VDDQ)

Fast clock-to-output times

— 6.5 ns (for 133-MHz version)

Provide high-performance 2-1-1-1 access rate

User-selectable burst counter supporting IntelPentiuminterleaved or linear burst sequences

Separate processor and controller address strobes

Synchronous self-timed write

Asynchronous output enable

Available in JEDEC-standard lead-free 100-Pin TQFP package

“ZZ” Sleep Mode option

Functional Description[1]

The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is

6.5ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automati- cally for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables

(BW[A:B], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

The CY7C1297H allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

The CY7C1297H operates from a +3.3V core power supply while all outputs may operate either with a +2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

Logic Block Diagram

 

 

 

 

 

A0,A1,A

ADDRESS

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

MODE

 

A[1:0]

 

 

 

 

 

 

 

 

ADV

BURST

Q1

 

 

 

CLK

COUNTER AND

 

 

 

 

LOGIC

 

 

 

 

 

CLR

Q0

 

 

 

ADSC

 

 

 

 

 

ADSP

 

 

 

 

 

 

DQB,DQPB

DQB,DQPB

 

 

 

 

WRITE DRIVER

 

 

 

BWB

WRITE REGISTER

 

OUTPUT

 

 

MEMORY

SENSE

DQs

 

 

ARRAY

BUFFERS

 

 

AMPS

DQPA

 

 

 

 

DQA,DQPA

DQA,DQPA

 

 

DQPB

BWA

WRITE DRIVER

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

BWE

 

 

 

INPUT

 

GW

 

 

 

 

ENABLE

 

 

REGISTERS

 

CE1

 

 

 

REGISTER

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

OE

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

CONTROL

 

 

 

 

Note:

 

 

 

 

 

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05669 Rev. *B

 

Revised July 6, 2006

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationSelection Guide Pin Configuration Pin Tqfp15CY7C1297H 133 MHz 100 MHz UnitPower supply for the I/O circuitry Power supply inputs to the core of the devicePin Descriptions Name DescriptionLinear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDFunctional Overview Parameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsCycle Description Address Used Adsp Adsc ADV Write CLKFunction Truth Table for Read/Write2BWE BW B BW a Operating Range Maximum RatingsAmbient Range Description Test Conditions Min Max UnitThermal Resistance9 Capacitance9AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 10 Read Cycle Timing16 Timing DiagramsWrite Cycle Timing16 DON’T Care Undefined Read/Write Timing16, 18DON’T Care ZZ Mode Timing20Ordering Information Package DiagramPin Tqfp 14 x 20 x 1.4 mm Document History Issue Date Orig. Description of ChangeREV ECN no

CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.