Cypress CY7C1297H manual Read/Write Timing16, 18, DON’T Care Undefined

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CY7C1297H

Timing Diagrams (continued)

Read/Write Timing[16, 18, 19]

tCYC

CLK

tt

CH CL

 

 

tADS

tADH

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

ADSC

 

 

 

 

 

 

 

 

 

 

tAS

tAH

 

 

 

 

 

ADDRESS

A1

A2

A3

 

A4

 

 

 

 

 

 

 

tWES

tWEH

 

 

BWE, BW[A:B]

 

 

 

 

 

 

 

 

 

 

tCES

tCEH

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

ADV

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

tDS

tDH

 

 

 

 

 

 

 

 

tOELZ

 

 

Data In (D)

 

High-Z

 

t

D(A3)

 

 

 

 

 

 

OEHZ

 

tCDV

 

 

 

 

 

 

 

 

 

 

Data Out (Q)

 

Q(A1)

Q(A2)

 

Q(A4)

Q(A4+1)

Q(A4+2) Q(A4+3)

 

 

Back-to-Back READs

Single WRITE

BURST READ

 

 

 

 

 

 

DON’T CARE

UNDEFINED

 

Notes:

18.The data bus (Q) remains in High-Z following a Write cycle unless an ADSP, ADSC, or ADV cycle is performed.

19.GW is HIGH.

A5 A6

D(A5) D(A6)

Back-to-Back WRITEs

Document #: 38-05669 Rev. *B

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration Pin Tqfp Selection Guide15CY7C1297H 133 MHz 100 MHz UnitPower supply inputs to the core of the device Power supply for the I/O circuitryPin Descriptions Name DescriptionInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDFunctional Overview ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max UnitCycle Description Address Used Adsp Adsc ADV Write CLKTruth Table for Read/Write2 FunctionBWE BW B BW a Maximum Ratings Operating RangeAmbient Range Description Test Conditions Min Max UnitCapacitance9 Thermal Resistance9AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 10 Timing Diagrams Read Cycle Timing16Write Cycle Timing16 Read/Write Timing16, 18 DON’T Care UndefinedZZ Mode Timing20 DON’T CarePackage Diagram Ordering InformationPin Tqfp 14 x 20 x 1.4 mm Issue Date Orig. Description of Change Document HistoryREV ECN no

CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.
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