Cypress CY7C1297H manual Capacitance9, Thermal Resistance9, AC Test Loads and Waveforms

Page 8

CY7C1297H

Capacitance[9]

Parameter

Description

Test Conditions

100 TQFP

Unit

Max.

 

 

 

 

 

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

5

pF

 

 

VDD = 3.3V.

 

 

CCLK

Clock Input Capacitance

5

pF

 

 

VDDQ = 2.5V

 

 

CI/O

Input/Output Capacitance

5

pF

 

Thermal Resistance[9]

 

 

 

Parameter

Description

Test Conditions

100 TQFP

Unit

Package

 

 

 

 

 

ΘJA

Thermal Resistance

Test conditions follow standard test methods and

30.32

°C/W

 

(Junction to Ambient)

procedures for measuring thermal impedance, per

 

 

 

 

EIA/JESD51

 

 

ΘJC

Thermal Resistance

6.85

°C/W

 

 

(Junction to Case)

 

 

 

AC Test Loads and Waveforms

3.3V I/O Test Load

3.3V

 

 

 

 

 

 

 

R = 317

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

Z0

= 50

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL

= 50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 351

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VT = 1.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

SCOPE

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

90%

10%

1 ns

2.5V I/O Test Load

 

 

 

 

 

 

2.5V

 

 

 

 

 

 

 

R = 1667

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

 

Z0

= 50

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL = 50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

R =1538

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VT = 1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

9. Tested initially and after any design or process change that may affect these parameters.

90%

10%

1 ns

Document #: 38-05669 Rev. *B

Page 8 of 15

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration Pin Tqfp Selection Guide15CY7C1297H 133 MHz 100 MHz UnitPower supply inputs to the core of the device Power supply for the I/O circuitryPin Descriptions Name DescriptionFunctional Overview Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max UnitCycle Description Address Used Adsp Adsc ADV Write CLKBWE BW B BW a Truth Table for Read/Write2Function Maximum Ratings Operating RangeAmbient Range Description Test Conditions Min Max UnitAC Test Loads and Waveforms Capacitance9Thermal Resistance9 Switching Characteristics Over the Operating Range 10 Timing Diagrams Read Cycle Timing16Write Cycle Timing16 Read/Write Timing16, 18 DON’T Care UndefinedZZ Mode Timing20 DON’T CarePin Tqfp 14 x 20 x 1.4 mm Package DiagramOrdering Information REV ECN no Issue Date Orig. Description of ChangeDocument History

CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.