Cypress CY7C1024DV33 Maximum Ratings, Operating Range, DC Electrical Characteristics, Capacitance

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Maximum Ratings

CY7C1024DV33

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage on VCC Relative to GND [2]....–0.5V to +4.6V

DC Voltage Applied to Outputs

 

in High Z State [2]

–0.5V to V + 0.5V

 

CC

DC Input Voltage [2]

 

–0.5V to V + 0.5V

 

 

 

CC

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

>2001V

(MIL-STD-883, Method 3015)

 

 

Latch Up Current

 

 

>200 mA

Operating Range

 

 

 

 

 

 

Range

Ambient

 

VCC

Temperature

 

Industrial

–40°C to +85°C

 

3.3V ± 0.3V

 

 

 

 

DC Electrical Characteristics

Over the Operating Range

Parameter

Description

 

 

Test Conditions [3]

 

–10

Unit

 

 

Min

 

Max

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min, IOH = –4.0 mA

2.4

 

 

V

VOL

Output LOW Voltage

VCC = Min, IOL = 8.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

2.0

 

VCC + 0.3

V

VIL[2]

Input LOW Voltage

 

 

 

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

–1

 

+1

μA

IOZ

Output Leakage Current

GND < VOUT < VCC, output disabled

–1

 

+1

μA

ICC

VCC Operating Supply

VCC = Max, f = fMAX = 1/tRC

 

 

175

mA

 

Current

IOUT = 0 mA CMOS levels

 

 

 

 

ISB1

Automatic CE Power Down

Max VCC,

 

> VIH

 

 

30

mA

CE

 

 

Current —TTL Inputs

VIN > VIH or VIN < VIL, f = fMAX

 

 

 

 

ISB2

Automatic CE Power Down

Max VCC,

 

> VCC – 0.3V,

 

 

25

mA

CE

 

 

Current — CMOS Inputs

VIN > VCC – 0.3V, or VIN < 0.3V, f = 0

 

 

 

 

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = 3.3V

8

pF

COUT

I/O Capacitance

 

10

pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

119-Ball

Unit

PBGA

 

 

 

 

ΘJA

Thermal Resistance

Still air, soldered on a 3 × 4.5 inch,

20.31

°C/W

 

(Junction to Ambient)

four layer printed circuit board

 

 

ΘJC

Thermal Resistance

 

8.35

°C/W

 

(Junction to Case)

 

 

 

Notes

2.VIL (min) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns.

3.CE refers to a combination of CE1, CE2, and CE3. CE is LOW when CE1, CE3 are LOW and CE2 is HIGH. CE is HIGH when CE1 is HIGH, or CE2 is LOW, or CE3 is HIGH.

Document Number: 001-08353 Rev. *C

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Contents Functional Description FeaturesLogic Block Diagram CY7C1024DV33Unit Pin ConfigurationSelection Guide DescriptionCapacitance DC Electrical CharacteristicsMaximum Ratings Operating RangeAC Switching Characteristics Figure 2. AC Test Loads and Waveform4Parameter Read Cycle Conditions AC Switching Characteristics continuedData Retention Characteristics Data Retention WaveformFigure 5. Write Cycle No. 1 CE Controlled 3, 16 Switching WaveformsFigure 3. Read Cycle No. 1 Address Transition Controlled 13 Figure 4. Read Cycle No. 2 OE Controlled 3, 14Figure 6. Write Cycle No. 2 WE Controlled, OE HIGH During Write 3, 16 Switching Waveforms continuedPower Truth TableOrdering Code Package DiagramOrdering Information SpeedDocument Number Sales, Solutions, and Legal InformationDocument History Page Document Title CY7C1024DV33, 3-Mbit 128K X 24 Static RAM