Cypress CY62256 manual Features, Cypress Semiconductor Corporation, Inputbuffer, Column, Decoder

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CY62256

256K (32K x 8) Static RAM

Features

Functional Description[1]

High speed: 55 ns and 70 ns

Voltage range: 4.5V–5.5V operation

Low active power (70 ns, LL version)

275 mW (max.)

Low standby power (70 ns, LL version)

28 W (max.)

Easy memory expansion with CE and OE features

TTL-compatible inputs and outputs

Automatic power-down when deselected

CMOS for optimum speed/power

Package available in a standard 450-mil-wide (300-mil body width) 28-lead narrow SOIC, 28-lead TSOP-1, 28-lead reverse TSOP-1, and 600-mil 28-lead PDIP packages

The CY62256 is a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected.

An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.

The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.

Logic Block Diagram

 

INPUTBUFFER

I/O0

 

 

A10

DECODERROW

 

 

 

 

 

I/O1

 

 

 

 

AMPSSENSE

 

A3

 

 

 

 

 

A9

 

 

 

 

 

 

I/O2

A8

 

 

 

 

 

 

A7

 

 

 

 

 

 

I/O3

A6

 

512 x 512

 

A5

 

ARRAY

 

 

I/O4

A4

 

 

 

 

 

 

A2

 

 

 

 

 

 

I/O5

CE

 

 

 

 

 

POWER

I/O6

WE

 

COLUMN

 

DOWN

 

 

 

DECODER

 

 

 

 

I/O7

OE

 

 

 

 

 

 

 

14

13

12

11

1

0

 

 

A

A

A A

A

A

 

Note:

1.For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

• 3901 North First Street • San Jose • CA 95134 • 408-943-2600

Document #: 38-05248 Rev. *B

Revised August 27, 2002

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Contents Cypress Semiconductor Corporation FeaturesInputbuffer ColumnElectrical Characteristics Over the Operating Range Pin ConfigurationsMaximum Ratings Operating RangeCapacitance4 Data Retention CharacteristicsAC Test Loads and Waveforms Data Retention WaveformSwitching Waveforms Switching Characteristics Over the Operating Range6CY62256− Parameter Description Min Max Unit Read Cycle Write Cycle9Write Cycle No WE Controlled Read Cycle No 12Write Cycle No CE Controlled Write Cycle No WE Controlled, OE LOW Typical DC and AC Characteristics Truth Table Inputs/Outputs Mode PowerOrdering Information Normalized Supply VoltageLead 600-mil Molded DIP P15 Package DiagramsLead 300-mil SNC Narrow Body SN28 Lead Thin Small Outline Package Type 1 8 x 13.4 mm Z28 Date Change Description of Change REV ECN no