CY62256
256K (32K x 8) Static RAM
Features | Functional Description[1] |
•High speed: 55 ns and 70 ns
•Voltage range:
•Low active power (70 ns, LL version)
—275 mW (max.)
•Low standby power (70 ns, LL version)
—28 ∝ W (max.)
•Easy memory expansion with CE and OE features
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•Automatic
•CMOS for optimum speed/power
•Package available in a standard
The CY62256 is a
An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
The input/output pins remain in a
Logic Block Diagram
| INPUTBUFFER | I/O0 | |||||
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A10 | DECODERROW |
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| I/O1 |
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| AMPSSENSE |
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A3 |
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A9 |
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| I/O2 |
A8 |
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A7 |
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| I/O3 |
A6 |
| 512 x 512 |
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A5 |
| ARRAY |
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| I/O4 | ||
A4 |
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A2 |
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| I/O5 |
CE |
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| POWER | I/O6 |
WE |
| COLUMN | |||||
| DOWN |
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| DECODER |
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| I/O7 | ||||
OE |
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| 14 | 13 | 12 | 11 | 1 | 0 |
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| A | A | A A | A | A |
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Note:
1.For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation | • 3901 North First Street • San Jose • CA 95134 • |
Document #: | Revised August 27, 2002 |