Cypress 7C185-35, 7C185-15 Switching Characteristics Over the Operating Range6, High to Low Z

Page 4

CY7C185

Switching Characteristics Over the Operating Range[6]

 

 

 

 

 

 

7C185-15

7C185-20

7C185-25

7C185-35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

 

Description

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

15

 

20

 

25

 

35

 

ns

tAA

 

Address to Data Valid

 

15

 

20

 

25

 

35

ns

tOHA

 

Data Hold from Address Change

3

 

5

 

5

 

5

 

ns

tACE1

 

 

1 LOW to Data Valid

 

15

 

20

 

25

 

35

ns

 

CE

 

 

 

 

tACE2

 

CE2 HIGH to Data Valid

 

15

 

20

 

25

 

35

ns

tDOE

 

 

 

 

LOW to Data Valid

 

8

 

9

 

12

 

15

ns

 

OE

 

 

 

 

 

tLZOE

 

 

 

 

LOW to Low Z

3

 

3

 

3

 

3

 

ns

 

OE

 

 

 

 

 

tHZOE

 

 

 

 

HIGH to High Z[7]

 

7

 

8

 

10

 

10

ns

 

OE

 

 

 

 

tLZCE1

 

 

1 LOW to Low Z[8]

3

 

5

 

5

 

5

 

ns

 

CE

 

 

 

 

tLZCE2

 

CE2 HIGH to Low Z

3

 

3

 

3

 

3

 

ns

tHZCE

 

 

1 HIGH to High Z[7, 8]

 

7

 

8

 

10

 

10

ns

 

CE

 

 

 

 

 

 

CE2 LOW to High Z

 

 

 

 

 

 

 

 

 

tPU

 

 

1 LOW to Power-Up

0

 

0

 

0

 

0

 

ns

 

CE

 

 

 

 

 

 

CE2 to HIGH to Power-Up

 

 

 

 

 

 

 

 

 

tPD

 

 

1 HIGH to Power-Down

 

15

 

20

 

20

 

20

ns

 

CE

 

 

 

 

 

 

CE2 LOW to Power-Down

 

 

 

 

 

 

 

 

 

Write Cycle[9]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

15

 

20

 

25

 

35

 

ns

tSCE1

 

 

1 LOW to Write End

12

 

15

 

20

 

20

 

ns

 

CE

 

 

 

 

tSCE2

 

CE2 HIGH to Write End

12

 

15

 

20

 

20

 

ns

tAW

 

Address Set-up to Write End

12

 

15

 

20

 

25

 

ns

tHA

 

Address Hold from Write End

0

 

0

 

0

 

0

 

ns

tSA

 

Address Set-up to Write Start

0

 

0

 

0

 

0

 

ns

tPWE

 

 

 

 

Pulse Width

12

 

15

 

15

 

20

 

ns

 

WE

 

 

 

 

tSD

 

Data Set-up to Write End

8

 

10

 

10

 

12

 

ns

tHD

 

Data Hold from Write End

0

 

0

 

0

 

0

 

ns

tHZWE

 

 

 

 

LOW to High Z[7]

 

7

 

7

 

7

 

8

ns

 

WE

 

 

 

 

tLZWE

 

 

 

 

HIGH to Low Z

3

 

5

 

5

 

5

 

ns

 

WE

 

 

 

 

Notes:

 

 

 

 

 

 

 

 

 

 

 

 

 

6.Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance.

7.tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ± 500 mV from steady state voltage.

8.At any given temperature and voltage condition, tHZCE is less than tLZCE1 and tLZCE2 for any given device.

9.The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. All 3 signals must be active to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.

Document #: 38-05043 Rev. *A

Page 4 of 11

Image 4
Contents Features Logic Block DiagramFunctional Description1 Selection Guide2Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range Ambient RangeAC Test Loads and Waveforms Capacitance5Parameter Description Test Conditions Max Unit Switching Characteristics Over the Operating Range6 High to Low ZRead Cycle No.110,11 Switching WaveformsWrite Cycle No WE Controlled11,13 Rite Cycle No CE Controlled13,14,15 Write Cycle No WE Controlled, OE LOW13,14,15,16Typical DC and AC Characteristics Normalized Supply CurrentAddress Designators Truth TableOrdering Information Lead 300-Mil Molded DIP P21 Package DiagramsLead 300-Mil Molded Soic S21 Lead 300-Mil Molded SOJ Document History Date Change Description of Change

7C185-15, 7C185-20, 7C185-25, 7C185-35 specifications

Cypress 7C185 series, comprising models 7C185-35, 7C185-25, 7C185-20, and 7C185-15, represents a significant leap in advanced semiconductor technology tailored for various applications in the electronics industry. These models are part of a broader family of programmable devices featuring a blend of flash and SRAM, designed to meet the dynamic needs of modern digital systems.

One of the main features across the 7C185 series is the impressive memory density and flexibility they offer. With capacities that allow for substantial code storage and efficient data handling, these devices cater well to applications in embedded systems, automotive controls, and industrial automation. The combination of flash memory technology with SRAM provides users the ability to easily reprogram devices, enabling quick iterations in design and functionality without the need for extensive hardware changes.

In terms of technology, Cypress has incorporated cutting-edge process nodes that result in lower power consumption and enhanced performance. This is notably crucial in battery-operated applications where efficiency is paramount. Furthermore, these chips support low-voltage operation, allowing them to seamlessly integrate into various low-power applications without sacrificing performance reliability.

Another characteristic of the Cypress 7C185 series is their robust security features. Embedded security protocols and encryption capabilities make these devices suitable for applications requiring secure data storage and transmission, fulfilling the modern demand for cybersecurity in IoT devices.

The architecture of these devices is optimized for high-speed access and quick response times, which is essential in applications that require real-time data processing. Enhanced I/O options, including multiple communication interfaces, facilitate connectivity with a broad range of peripherals and systems, making integration into existing infrastructures smoother.

Additionally, these models come with built-in support for various programming standards and methodologies, simplifying the development process for engineers. They also provide extensive support documentation and development tools from Cypress, enabling developers to leverage the full potential of the device easily.

In summary, the Cypress 7C185-35, 7C185-25, 7C185-20, and 7C185-15 chips embody a blend of high memory capacity, energy efficiency, robust security, and versatile integration capabilities, making them a reliable choice for today's complex electronic applications. Their advanced features position them as pivotal components in driving innovation across various sectors, including consumer electronics, automotive, and industrial automation.