Transcend Information TS4/8GUSDHC6-P3 Bus Operating Conditions General, Power Supply Voltage

TS4/8GUSDHC6-P3 4/8GB microSDHC Class 6 Card + Reader P3

Bus Operating Conditions

• General

Parameter	Symbol		Min.	Max.	Unit
Peak voltage on all lines		-0.3		VDD+0.3	V
All Inputs
Input Leakage Current			-10	10	µA
All Outputs
Output Leakage Current			-10	10	µA

•Power Supply Voltage

Parameter	Symbol	Min.	Max.	Unit
Supply voltage	VDD	2.7	3.6	V
Output High Voltage	VOH	0.75* VDD		V
Output Low Voltage	VOL		0.125* VDD	V
Input High Voltage	VIH	0.625* VDD	VDD+0.3	V
Input Low Voltage	VIL	VSS-0.3	0.25* VDD	V
Power up time			250	ms

Remark

Remark

IOH=-100uA@VDDMin. IOL=100uA@VDD Min.

From 0v to VDD Min.

•Current Consumption

The current consumption is measured by averaging over 1 second.

‧Before first command: Maximum 15 mA

‧During initialization: Maximum 100 mA

‧Operation in Default Mode: Maximum 100 mA

‧Operation in High Speed Mode: Maximum 200 mA

‧Operation with other functions: Maximum 500 mA.

•Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards.

Parameter	Symbol	Min.	Max.	Unit
Pull-up resistance	RCMD	10	100	kΩ
	RDAT
Bus signal line capacitance	CL		40	pF

Remark

To prevent bus floating

1 card

CHOST+CBUS shall not exceed 30 pF

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