MoBL®, CY62126EV30
Document #: 38-05486 Rev. *E Page 3 of 13
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied............................................ –55°C to +125°C
Supply Voltage to Ground
Potential.................................–0.3V to 3.6V (VCCmax + 0.3V)
DC Voltage Applied to Outputs
in High-Z State[4, 5]................ –0.3V to 3.6V (VCCmax + 0.3V)
DC Input Voltage[4, 5]...............−0.3V to 3.6V (VCCmax + 0.3V)
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Device Range Ambient
Temper atur e VCC[6]
CY62126EV30LL Industrial –40°C to +85°C 2.2V to
3.6V
Automotive –40°C to +125°C
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions 45 ns (Industrial) 55 ns (Automotive) Unit
Min Typ[1] Max Min Typ [1] Max
VOH Output HIGH Voltage IOH = –0.1 mA 2.0 2.0 V
IOH = –1.0 mA, VCC > 2.70V 2.4 2.4 V
VOL Output LOW Voltage IOL = 0.1 mA 0.4 0.4 V
IOL = 2.1mA, VCC > 2.70V 0.4 0.4 V
VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3 1.8 VCC + 0.3 V
VCC = 2.7V to 3.6V 2.2 VCC + 0.3 2.2 VCC + 0.3 V
VIL Input LOW
Voltage VCC = 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V
VCC = 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V
IIX Input Leakage Current GND < VI < VCC –1 +1 –4 +4 μA
IOZ Output Leakage
Current GND < VO < VCC, Output
Disabled –1 +1 –4 +4 μA
ICC VCC Operating Supply
Current
f = fmax = 1/tRC VCC = VCCmax
IOUT = 0 mA
CMOS levels
11 16 11 35 mA
f = 1 MHz 1.3 2.0 1.3 4.0
ISB1 Automatic CE Power
down Current
—CMOS Inputs
CE > VCC − 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax (Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
VCC = 3.60V
14 135μA
ISB2 [7] Automatic CE Power
down Current
—CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
14 130μA
Capacitance
For all packages. Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz, VCC = VCC(typ) 10 pF
COUT Output Capacitance 10 pF
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100 μs ramp time from 0 to V cc(min) and 200 μs wait time after Vcc stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
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