Cypress CY62147EV30 Thermal Resistance9, Data Retention Characteristics, Parameters 50V Unit

CY62147EV30 MoBL®

Thermal Resistance[9]

Parameter	Description	Test Conditions	VFBGA	TSOP II	Unit
			Package	Package
ΘJA	Thermal Resistance	Still Air, soldered on a 3 × 4.5 inch, two-layer	75	77	°C/W
	(Junction to Ambient)	printed circuit board
ΘJC	Thermal Resistance		10	13	°C/W
	(Junction to Case)

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

	Figure 4. AC Test Load and Waveforms
	VCC	ALL INPUT PULSES
			90%
	10%	90%		10%
R2	GND
	Rise Time = 1 V/ns			Fall Time = 1 V/ns

Equivalent to: THEVENIN EQUIVALENT

RTH

OUTPUT V

Parameters	2.50V	3.0V	Unit
R1	16667	1103	Ω
R2	15385	1554	Ω
RTH	8000	645	Ω
VTH	1.20	1.75	V

Data Retention Characteristics

Over the Operating Range

Parameter	Description			Conditions		Min	Typ [2]	Max	Unit
VDR	VCC for Data Retention					1.5			V
ICCDR[8]	Data Retention Current	VCC= 1.5V,		> VCC – 0.2V,	Ind’l/Auto-A		0.8	7	μA
			CE
		VIN > VCC – 0.2V or VIN < 0.2V
					Auto-E			12
tCDR [9]	Chip Deselect to Data Retention Time					0			ns
t [10]	Operation Recovery Time					t			ns
R						RC

		Figure 5. Data Retention Waveform[1, 11]
		VCC(min)	DATA RETENTION MODE		VCC(min)
V	CC		V	> 1.5V
		tCDR	DR		tR
CE or
BHE.BLE

Notes

10.Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

11.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.

Document #: 38-05440 Rev. *G Page 4 of 13

[+] Feedback