CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *F Page 6 of 28
Pin Definitions
Pin Name I/O Type Pin Description
A0
A1
A
Input-
Synchronous Address Inputs used to select one of the address locations. Sampled at the rising edge of
the CLK.
BWa
BWb
BWc
BWd
Input-
Synchronous Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the SRAM.
Sampled on the rising edge of CLK. BWa controls DQa and DQPa, BWb controls DQb and DQPb,
BWc controls DQc and DQPc, BWd controls DQd and DQPd.
WE Input-
Synchronous Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This
signal must be asserted LOW to initiate a write sequence.
ADV/LD Input-
Synchronous Advance/Load Input used to advance the on-chip address counter or load a new address.
When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a
new address can be loaded into the device for an access. After being deselected, ADV/LD should
be driven LOW in order to load a new address.
CLK Input-
Clock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
CE1Input-
Synchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE2 and CE3 to select/deselect the device.
CE2Input-
Synchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE3 to select/deselect the device.
CE3Input-
Synchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE1 and CE2 to select/deselect the device.
OE Input-
Asynchronous Output Enable, active LOW. Combined with the synchronous logic block inside the device to
control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs.
When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when emerging from a deselected
state and when the device has been deselected.
CEN Input-
Synchronous Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized by the
SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not
deselect the device, CEN can be used to extend the previous cycle when required.
DQSI/O-
Synchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by A[17:0] during the previous clock rise of the read cycle. The direction of the pins is
controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave
as outputs. When HIGH, DQa–DQd are placed in a tri-state condition. The outputs are automat-
ically tri-stated during the data portion of a write sequence, during the first clock when emerging
from a deselected state, and when the device is deselected, regardless of the state of OE.
DQPXI/O-
Synchronous Bidirectional Data Parity I/O lines. Functionally, these signals are identical to DQs. During write
sequences, DQPa is controlled by BWa, DQPb is controlled by BWb, DQPc is controlled by BWc,
and DQPd is controlled by BWd.
MODE Input Strap Pin Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.
Pulled LOW selects the linear burst order. MODE should not change states during operation.
When left floating MODE will default HIGH, to an interleaved burst order.
TDO JTAG serial
output
Synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.
TDI JTAG serial
input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK.
TMS Test Mode
Select
Synchronous
This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK.
TCK JTAG-Clock Clock input to the JTAG circuitry.
VDD Power Supply Power supply inputs to the core of the device.
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