STK16C88

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Temperature under bias

–55°C to +125°C

Supply Voltage on VCC Relative to GND

–0.5V to 7.0V

Voltage on Input Relative to Vss

–0.6V to VCC + 0.5V

Voltage on DQ0-7

–0.5V to Vcc + 0.5V

Power Dissipation

1.0W

DC output Current (1 output at a time, 1s duration) .... 15 mA

Operating Range

Range

Ambient Temperature

VCC

Commercial

0°C to +70°C

4.5V to 5.5V

 

 

 

Industrial

-40°C to +85°C

4.5V to 5.5V

 

 

 

DC Electrical Characteristics

Over the operating range (VCC = 4.5V to 5.5V)

Parameter

Description

 

 

 

 

 

Test Conditions

 

 

Min

Max

Unit

ICC1

Average VCC Current

tRC = 25 ns

 

Commercial

 

97

mA

 

 

 

tRC = 45 ns

 

 

 

 

70

mA

 

 

 

Dependent on output loading and cycle rate.

 

 

 

 

 

 

 

 

 

 

Industrial

 

100

mA

 

 

 

Values obtained without output loads.

 

 

 

 

 

 

 

 

 

70

mA

 

 

 

IOUT = 0 mA.

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC2

Average VCC Current

 

All Inputs Do Not Care, VCC = Max

 

 

 

3

mA

 

during STORE

 

Average current for duration tSTORE

 

 

 

 

 

ICC3

Average VCC Current

 

 

 

> (VCC – 0.2V). All other inputs cycling.

 

 

 

10

mA

WE

 

 

 

 

at tRC= 200 ns, 5V,

 

Dependent on output loading and cycle rate. Values obtained

 

 

 

 

25°C Typical

 

without output loads.

 

 

 

 

 

ISB1 [3]

Average VCC Current

 

tRC=25ns,

 

> VIH

 

Commercial

 

30

mA

CE

 

 

(Standby, Cycling

 

tRC=45ns, CE > VIH

 

 

 

 

22

 

 

TTL Input Levels)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

31

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

23

 

 

 

 

 

 

 

 

 

 

ISB2[3]

VCC Standby Current

 

 

> (VCC – 0.2V). All others VIN < 0.2V or > (VCC – 0.2V).

 

1.5

mA

CE

 

 

(Standby, Stable

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CMOS Input Levels)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIX

Input Leakage

 

VCC = Max, VSS < VIN < VCC

 

 

-1

+1

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Off State Output

 

VCC = Max, VSS < VIN < VCC,

 

or

 

> VIH or

 

< VIL

-5

+5

μA

CE

OE

WE

 

Leakage Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

2.2

VCC +

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VSS

0.8

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

VOH

Output HIGH Voltage

IOUT = –4 mA

 

 

2.4

 

V

VOL

Output LOW Voltage

 

IOUT = 8 mA

 

 

 

0.4

V

Data Retention and Endurance

 

 

 

 

 

Parameter

Description

Min

Unit

DATAR

Data Retention

100

Years

NVC

Nonvolatile STORE Operations

1,000

K

Note

3. CE > VIH does not produce standby current levels until any nonvolatile cycle in progress has timed out.

Document Number: 001-50595 Rev. **

Page 6 of 14

[+] Feedback

Page 6
Image 6
Cypress STK16C88 manual Maximum Ratings, Operating Range, DC Electrical Characteristics, Data Retention and Endurance

STK16C88 specifications

The Cypress STK16C88 is a highly regarded SRAM (Static Random Access Memory) device that is designed for high-performance computing applications. As a member of the Cypress family of memory solutions, the STK16C88 is known for its efficiency, speed, and reliability, making it a popular choice among engineers and developers seeking robust memory solutions for their projects.

One of the key features of the STK16C88 is its high-speed access capability. It operates at a maximum access time of just 55 nanoseconds, enabling rapid data retrieval and processing. This characteristic makes it particularly suitable for applications requiring quick response times, such as telecommunications, networking equipment, and industrial automation systems.

The STK16C88 boasts a dual-port architecture, which allows simultaneous access to data from multiple devices. This enhances the flexibility of the memory chip, making it ideal for multi-processor systems where efficient data sharing is critical. The dual-port feature also facilitates easier designs for applications that require real-time data processing and eliminates potential bottlenecks that might hinder system performance.

In terms of capacity, the STK16C88 provides 128K bits of memory, organized as 16K x 8 bits. This allocation of memory provides ample space for storing data and program code, making it versatile for various applications, including embedded systems and consumer electronics. Additionally, it supports asynchronous read/write operations, ensuring that the system can perform tasks without being held up by the memory component.

Another important characteristic of the STK16C88 is its low power consumption, which is vital for battery-operated devices and portable electronics. The device operates with a supply voltage of 3.3V, making it suitable for modern low-power applications. Its energy-efficient design extends battery life and reduces heat generation, further enhancing the reliability of the systems that utilize it.

Moreover, the STK16C88 is characterized by its compatibility with various industry-standard memory interfaces, allowing for seamless integration into existing systems. The simplicity of implementation, combined with its robust performance and reliability, makes it an excellent choice for manufacturers looking to enhance the capabilities of their devices.

In conclusion, the Cypress STK16C88 is a high-performance, low-power SRAM solution that is well-suited for various applications ranging from telecommunications to consumer electronics. Its key features, including dual-port architecture, high-speed access, and low power consumption, position it as a valuable component in the design of contemporary electronic systems.