Delta Electronics manual Parameter Q48DR1R533NRFA

TECHNICAL SPECIFICATIONS (TA=25°C, airflow rate=300 LFM, Vin=48Vdc, nominal Vout unless otherwise noted.)

PARAMETER	NOTES and CONDITIONS		Q48DR1R533NRFA
ABSOLUTE MAXIMUM RATINGS			Min.	Typ.	Max.	Units
Input Voltage
Continuous					80	Vdc
Transient (100ms)	<100ms				100	Vdc
Operating Temperature	Please refer to figure 27 for measuring point		-40		120	°C
Storage Temperature			-55		125	°C
Input/Output Isolation Voltage			1500			Vdc
INPUT CHARACTERISTICS
Operating Input Voltage			36	48	75	Vdc
Input Under-Voltage Lockout
Turn-On Voltage Threshold			33	34	35	Vdc
Turn-Off Voltage Threshold			31	32	33	Vdc
Lockout Hysteresis Voltage			1	2	3	Vdc
Maximum Input Current	100%load, 36Vin				2.7	A
No-Load Input Current				100	150	mA
Off Converter Input Current				5	10	mA
Inrush Current(I2t)				0.015		A2s
Input Reflected-Ripple Current	P-P thru 12µH inductor, 5Hz to 20MHz			10		mA
Input Voltage Ripple Rejection	120Hz			50		dB
OUTPUT CHARACTERISTICS		Vout 1	1.476	1.500	1.524
Output Voltage Set Point	Vin=48V, Io=Io.max, Tc=25℃					Vdc
		Vout 2	3.247	3.300	3.353
Output Voltage Regulation
	Io1=Io, min to Io, max, Io2=0A	Vout 1
Over Load				±5	±10	mV
	Io2=Io, min to Io, max, Io1=0A	Vout 2
Over Line	Vin=36V to 75V,Io1=Io2=full load	Vout 1		±3	±10	V
		Vout 2
Cross Regulation	Worse Case			±5	±10	mV
Over Temperature	Tc=-40 ℃ to 85 ℃			±15	±50
Total Output Voltage Range	Over sample load, line and temperature	Vout 1	1.455		1.545	V
		Vout 2	3.201		3.399	V

Output Voltage Ripple and Noise	5Hz to 20MHz bandwidth
Peak-to-Peak	Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum	Vout 1				40		80	mV
		Vout 2				40		80
RMS	Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum	Vout 1				10		30	mV
		Vout 2			10		30
Operating Output Current Range		Vout 1		0				15	A
		Vout 2		0				15
Output DC Current-Limit Inception		Vout 1		100%				150%
		Vout 2	100%				150%

DYNAMIC CHARACTERISTICS
Output Voltage Current Transient	48V, 10µF Tan & 1µF Ceramic load cap, 0.1A/µs
Positive Step Change in Output Current	Iout1from 50% Io, max to 75% Io, max	Vout 1	100	mV
		Vout 2	100
Negative Step Change in Output Current	Iout2 from 75% Io, max to 50% Io, max	Vout 1	100	mV
		Vout 2	100

Cross dynamic	Each channel independence				20		mV
Settling Time (within 1% Vout nominal)				150			US
Turn-On Transient
Start-up Time, From On/Off Control				10		15	MS
Start-up Time, From Input				10		15	mS
Maximum Output Capacitance	Full load; 5% overshoot of Vout at startup	Vout 1				10000	µF
		Vout 2				10000
EFFICIENCY
100% Load	Iout1, Iout2 full load, 48vdc Vin			87.5			%
60% Load	Iout1, Iout2 60% of full load, 48vdc Vin			88			%
ISOLATION CHARACTERISTICS
Input to Output			1500				Vdc
Isolation Resistance			10				MΩ
Isolation Capacitance				3000			pF
FEATURE CHARACTERISTICS
Switching Frequency				350			kHz
ON/OFF Control, (Logic Low-Module ON)
Logic Low	Von/off at Ion/off=1.0mA		0			0.8	V
Logic High	Von/off at Ion/off=0.0 µA					18	V
ON/OFF Current	Ion/off at Von/off=0.0V					1	mA
Leakage Current	Logic High, Von/off=15V					50	uA
Output Voltage Trim Range	Pout ≦ max rated power		-10			+10	%
Output Over-Voltage Protection	Over full temp range; %of nominal Vout		115	122		130	%
GENERAL SPECIFICATIONS
MTBF	Io=80% of Io, max; Ta=25°C 300LFM			2.5			Mhours
Weight				26.5			grams
Over-Temperature Shutdown	Please refer to figure 27 for measuring point			128			°C

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DS_Q48DR1R533_03152007