13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS

13.ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS

(1) CMOS output

(Ta=25°C RL=∞ unless otherwise specified)

Item

Symbol

 

Conditions

Min.

Typ.

Max.

Unit

Detecting voltage

 

VDET-

 

-

VDET-(S)⋅0.98

VDET-(S)

VDET-(S)⋅1.02

V

Hysteresis width

 

VHYS

VHYS=(VDET+)-(VDET-)

VDET-*0.03

VDET-*0.05

VDET-*0.07

V

Consumption current 1

 

ISS1

VDD=2.5V, VDET-(S)=1.5V

-

350

700

nA

 

VDD=3.7V, VDET-(S)=2.7V

-

350

700

 

 

 

 

VDD=5.5V, VDET-(S)=4.6V

-

350

700

 

Consumption current 2

 

ISS2

VDD=1.3V, VDET-(S)=1.5V

-

280

560

nA

 

VDD=2.5V, VDET-(S)=2.7V

-

280

560

 

 

 

 

VDD=4.4V, VDET-(S)=4.6V

-

280

560

 

Max. operating voltage

 

VDDH

 

-

-

-

5.5

V

Min. operating voltage

 

VDDL

 

-

0.9

-

-

V

 

 

IOUTN

[Nch]

VDD=0.9V, VDS=0.5V

0.2

0.8

1.5

 

 

 

VDD=1.2V, VDS=0.5V

1.0

2.2

3.5

 

 

 

VDD<VDET-

 

 

 

 

 

VDD=2.4V, VDS=0.5V

5.5

6.8

8.1

 

 

 

 

 

 

 

Output current

 

 

 

 

VDD=3.0V,

2.5

4.5

7.0

mA

 

 

 

 

VDS=VDD-0.5V

 

 

 

[Pch]

 

 

 

 

 

IOUTP

VDD=4.0V,

4.5

6.2

8.0

 

 

 

VDD>VDET-

VDS=VDD-0.5V

 

 

 

 

 

 

VDD=5.5V,

6.5

8.2

9.8

 

 

 

 

 

 

VDS=VDD-0.5V

 

 

 

 

 

 

 

 

 

 

Delay time

 

td

 

td=50ms

42.5

50

57.5

ms

 

 

td=100ms

85

100

115

 

 

 

 

 

td=200ms

170

200

230

 

Response time

 

tPHL

VDD: (VDET-(S))+1.0V ===> 0.9V

-

-

80

∝s

Detecting voltage

 

∆VDET

 

-40°C≦Topt≦85°C

-

±100

-

ppm/°C

temperature

 

 

∆Topt

coefficient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(2) Nch open drain output

 

 

(Ta=25°C RL=∞ unless otherwise specified)

 

 

 

 

 

 

Item

Symbol

 

Conditions

Min.

Typ.

Max.

Unit

Detecting voltage

 

VDET-

 

-

VDET-(S)⋅0.98

VDET-(S)

VDET-(S)⋅1.02

V

Hysteresis width

 

VHYS

VHYS=(VDET+)-(VDET-)

VDET-*0.03

VDET-*0.05

VDET-*0.07

V

Consumption current 1

 

ISS1

VDD=2.5V, VDET-(S)=1.5V

-

350

700

nA

 

VDD=3.7V, VDET-(S)=2.7V

-

350

700

 

 

 

 

VDD=5.5V, VDET-(S)=4.6V

-

350

700

 

Consumption current 2

 

ISS2

VDD=1.3V, VDET-(S)=1.5V

-

280

560

nA

 

VDD=2.5V, VDET-(S)=2.7V

-

280

560

 

 

 

 

VDD=4.4V, VDET-(S)=4.6V

-

280

560

 

Max. operating voltage

 

VDDH

 

-

-

-

5.5

V

Min. operating voltage

 

VDDL

 

-

0.9

-

-

V

Output current of

 

IOUTN

[Nch]

VDD=0.9V, VDS=0.5V

0.2

0.8

1.5

mA

 

VDD=1.2V, VDS=0.5V

1.0

2.2

3.5

output transistor

 

VDD<VDET-

 

 

 

VDD=2.4V, VDS=0.5V

5.5

6.8

8.1

 

 

 

 

 

 

 

Leak current of output

 

ILEAK

VDD=5.5V,VDS=5.5V

-

-

0.1

∝A

transistor

 

 

 

 

 

 

 

 

 

 

Delay time

 

td

 

td=50ms

42.5

50

57.5

ms

 

 

td=100ms

85

100

115

 

 

 

 

 

td=200ms

170

200

230

 

Response time

 

tPHL

VDD: (VDET-(S))+1.0V ===> 0.9V

-

-

80

∝s

Detecting voltage

 

∆VDET

 

-40°C≦Topt≦85°C

-

±100

-

ppm/°C

temperature

 

 

∆Topt

coefficient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

EPSON

S1F77B01 Technical Manual (Rev.1.3)