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GE PFMN445, PFDS450, PFDN440, PFDS455, PFMS450, PFMN440, PFDN445, PFMS455 No Haga LO Siguiente, Codos

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

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Instrucciones de instalación

SALIDA AL EXTERIOR DE LA SECADORA (cont.)

CÓMO UTILIZAR CONDUCTOS DE METAL FLEXIBLES PARA VENTILACIÓN DE TRANSICIÓN

Se recomiendan los conductos de metal rígidos o semi-rígidos como conductos de transición entre la secadora y la pared. En instalaciones especiales donde resulta imposible efectuar una conexión con las recomendaciones anteriores, entonces puede utilizarse un conducto de transición de metal flexible listado UL entre la secadora y la conexión de la pared solamente. El uso de este tipo de conducto afectará el tiempo de secado. Sólo deben utilizarse los conductos flexibles del tipo de aluminio especialmente identificados por el fabricante para poder ser usados con el artefacto. En los Estados Unidos, el conducto debe cumplir con las indicaciones para conductos de transición en secadoras de ropa, tema 2158A.

Si resulta necesario un conducto de transición de metal flexible, deben seguirse las siguientes instrucciones:

•Utilice la longitud más corta posible. La longitud total del conducto de metal flexible no deberá superar los 2.4 m.

•Estire el conducto hasta su longitud máxima.

•No lo aplaste o pliegue.

•Nunca utilice un conducto de metal flexible dentro de la pared o dentro de la secadora.

•No coloque el conducto sobre objetos afilados.

•La ventilación debe cumplir con los códigos de edificación locales.

PARA VENTILACIÓN DE TRANSICIÓN (SECADORA A PARED), HAGA LO SIGUIENTE:

•CORTE el conducto lo más corto posible e instálelo derecho en la pared.

•UTILICE codos cuando hagan falta curvas.

Codos

NO HAGA LO SIGUIENTE:

•NO doble o pliegue los conductos. Utilice codos si algunos codos resultan necesarios.

•NO utilice una longitud de salida excesiva. Corte los conductos con

la longitud más corta posible.

•NO aplaste

el conducto contra la pared.

•NO coloque la secadora en el conducto.

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GE PFMN445, PFDS450, PFDN440, PFDS455, PFMS450, PFMN440, PFDN445, PFMS455 operating instructions No Haga LO Siguiente, Codos
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.