SPECIFICATIONS
Power Rating: Less than 0.02% total harmonic distortion at any power level up to 115 watts continuous average power per channel into 8 ohms at any frequency between 20 Hz and 20 kHz with both channels driven.
IM Distortion (SMPTE): Less than O.OOS’%, from 1 watt to 1 15 watts into 8 ohms.
Typical THD at 115 watts into 8 ohms:
I kHz - 0 00 25% IO kHz - 0 . 0 0 7 % 20 kHz - 0.012’/‘
Frequency Response into 8 ohms:
- 3 dB. 2 Hz to 160 kHz at 1 watt
+O,
Typical Channel Separation: 20 Hz:> 75 dB 1 kHz:>85 dB 20 kHz: >6S dB
Input Impedance: 47,OOO ohms.
Input Sensitivity: 1.55 volts rms for 1 15 watts into 8 ohms.
Damping Factor: 300 to 1 kHz into 8 ohms 60 to 10 kHz into 8 ohms
Rise Time: 10 kHz. 60 volts peak to peak square wave, 1 0 % to 9 0 % 2.5 us.
Slew Rate: 10 kHz. 60 volts peak to peak square wave: 30 VI’,~ s.
Semiconductor Complement: 26 transistors. 8 power Mosfets, 29 diodes, 4 zener diodes. 1 diode bridge.
Power Consumption: 1 15 watts into 8 ohms: 840 VA; Quiescent: 125 VA.
Size:
Signal to Noise Ratio, unweighted: Better than 100 dB at 115 | Net Weight: 26 Ibs. |
|
watts into 8 ohms. | Shipping Weight: 30 Ibs. |
All Specifications are subject to change without notice.
Printed in USA
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