NXP Semiconductors SA58670A 9. Dynamic characteristics

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 6 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

9. Dynamic characteristics

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

Table 5. Dynamic characteristics

T

amb

=25

°

C; R

L

=8

Ω

; unless otherwise speciﬁed

[1]

.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power per channel; f = 1kHz; THD+N = 10 %

RL=8Ω; VDD= 3.6 V - 0.72 - W

RL=8Ω; VDD= 5.0 V - 1.4 - W

RL=4Ω; VDD= 5.0 V - 2.1 - W

THD+N total harmonic

distortion-plus-noise VDD = 5.0 V; Gv(cl)= 6 dB; f=1kHz

Po=0.5 W - 0.11 - %

Po=1.0 W - 0.14 - %

SVRR supply voltage ripple

rejection Gv(cl) =6 dB; f = 217 Hz

VDD= 3.6 V - −73 - dB

VDD =5.0 V - −77 - dB

CMRR common mode rejection

ratio VDD= 5.0 V; Gv(cl) = 6 dB; f = 217 Hz - −69 - dB

Ziinput impedance Gv(cl)= 6 dB - 28.1 - kΩ

Gv(cl) =12 dB - 17.3 - k Ω

Gv(cl) =18 dB - 9.8 - k Ω

Gv(cl) =24 dB - 5.2 - k Ω

td(sd-startup) delay time from

shutdown to start-up VDD = 3.6 V - 3.5 - ms

Vn(o) output noise voltage VDD= 3.6 V; f = 20 Hz to 20 kHz;

inputs are AC grounded

no weighting - 35 - µV

A weighting - 27 - µV

Contents

Main 1. General description 2. Features 3. Applications SA58670A Rev. 02 23 October 2008 Product data sheet 2.1 W/channel stereo class-D audio amplier Product data sheet Rev. 02 23 October 2008 2 of 24 2.1 W/channel stereo class-D audio amplier nEducational toy 4. Ordering information Fig 1. Block diagram 5. Block diagram Refer toTable 6 for gain selection. SA58670A 6. Pinning information 6.1 Pinning 6.2 Pin description 7. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). NXP Semiconductors SA58670A 8. Static characteristics C; unless otherwise specied =25 T . 9. Dynamic characteristics ; unless otherwise specied =8 =25 T 10. Typical performance curves Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL=8 a. Gv(cl) =24dB b. Gv(cl) = 6 dB. fi=1 kHz. (1) VDD= 2.5 V. (2) VDD= 3.6 V. (3) VDD= 5.0 V. NXP Semiconductors SA58670A a. Gv(cl) =24dB. Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL=4 b. Gv(cl) = 6 dB. fi=1 kHz. (1) VDD= 2.5 V. (2) VDD= 3.6 V. (3) VDD= 5.0 V. Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD= 2.5 V Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD= 3.6 V Fig 7. Total harmonic distortion-plus-noise as a function of frequency; VDD= 5.0 V Fig 8. Crosstalk (stepped all-to-one) as a function of frequency (1) Left channel. (2) Right channel. Fig 9. Noise output voltage (RMS value) as a function of frequency (1) VDD = 2.5 V. Fig 10. Crosstalk (one-to-one) as a function of frequency (3) VDD = 5.0 V. (1) left channel; RL=8. (2) right channel; RL=4. (3) right channel; RL=8. (1) VDD = 2.5 V. Fig 13. Supply current as a function of output power (3) VDD = 5.0 V. (1) VDD = 5.0 V. Fig 14. Power dissipation as a function of output power (3) VDD = 2.5 V. Fig 15. Output power efciency as a function of output power (1) VDD = 5.0 V. (3) VDD = 2.5 V. 11. Application information 11.1 Power supply decoupling considerations 11.2 Input capacitor selection 11.3 PCB layout considerations 11.4 Filter-free operation and ferrite bead lters 11.5 Efciency and thermal considerations 12. Test information 11.6 Additional thermal information 13. Package outline SOT917-1 Fig 18. Package outline SOT917-1 (HVQFN20) 14. Soldering of SMD packages 14.4 Reow soldering For further information on temperature proles, refer to Application Note AN10365 Surface mount reow soldering description . 15. Abbreviations 16. Revision history Product data sheet Rev. 02 23 October 2008 23 of 24 17. Legal information 17.1 Data sheet status 17.2 Denitions 17.3 Disclaimers 17.4 Trademarks 19. Contents