UP05C8B 2 SJJ00333AED
Electrical Characteristics Ta = 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V
Base-emitter voltage VBE VCE = 6 V, IC = 1 mA 720 mV
Forward current transfer ratio hFE VCE = 6 V, IC = 1 mA 65 160
Reverse transfer capacitance
(Common emitter) Cre VCB = 6 V, IE = -1 mA, f = 10.7 MHz 0.8 pF
Transition frequency fTVCB = 6 V, IE = -1 mA, f = 200 MHz 640 MHz
Noise figure NF VCB = 6 V, IE = -1 mA, f = 100 MHz 3.3 dB
Power gain GPVCB = 6 V, IE = -1 mA, f = 100 MHz 24 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 10 V, VG = 0 3.5 5.5 mA
Output impedance ZOVDS = 10 V, VG = 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
PT Ta
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
UN05C8B_PT-Ta