UP05C8B SJJ00333AED 3
IC VCE IC IB IC VBE
VCE(sat) IC hFE IC
Characteristics charts of Tr
0 42 8 106 12
0
10
8
12
2
6
4
Collector current IC (mA)
Collector-emitter voltage VCE (V)
UP05C8B_IC-VCE
80 µA
40 µA
20 µA
Ta = 25°C
IB = 100 µA
60 µA
0.1 1 10 100
0.1
1
0.01
UP05C8B_
VCE(sat)
-
IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
IC / IB = 10
Ta = 85°C
25°C
−25°C
1 10 100
20
120
80
100
60
40
140
0
UP05C8B_
hFE
-
IC
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 85°C
−25°C
25°C
0 0.40.2 0.80.6 1.0
0
35
40
30
45
5
10
20
25
15
Collector current IC (mA)
Base current IB (mA)
UP05C8B_IC-VCE
VCE = 6 V
0 0.4 0.60.2 1.20.8 1.0 1.4
0
40
50
10
20
30
Collector current IC (mA)
Base-emitter voltage VBE (V)
UP05C8B_IC-VBE
VCE = 6 V
Ta = 85°C
−25°C
25°C
IP VDS
Characteristics charts of CCD load device
0 42 14106 8 12 16
0
3.5
4.0
3.0
4.5
0.5
1.0
2.0
2.5
1.5
Peak current IP (mA)
Drain-source voltage VDS (V)
UP05C8B_IP-VDS
VG = 0