Philips BGD885 specifications - page 2

2001 Nov 02 2
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
FEATURES
•Excellent linearity
•Extremely low noise
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN DESCRIPTION
1 input
2, 3, 5, 6, 7 common
4 10 V, 200 mA supply terminal
8+V
B
9 output
Fig.1 Simplified outline.
handbook, halfpage
789
246
351
Side view
MBK049
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 16.5 17.5 dB
Itot total current consumption (DC) VB= 24 V −450 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBDC supply voltage −26 V
ViRF input voltage −65 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C