2001 Nov 02 3
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb =35°C; ZS=Z
L=75Ω
Notes
1. Decrease per octave of 1.5 dB.
2. Vp= 59 dBmV at fp= 349.25 MHz;
Vq= 59 dBmV at fq= 403.25 MHz;
measured at fp+f
q= 752.5 MHz.
3. Measured according to DIN45004B:
fp= 341.25 MHz; Vp=V
o
;
f
q= 348.25 MHz; Vq=V
o−6 dB;
fr= 350.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 339.25 MHz.
4. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=V
o
;
f
q= 858.25 MHz; Vq=V
o−6 dB;
fr= 860.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 849.25 MHz.
5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 16.5 17.5 dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.5 dB
S11 input return losses f = 40 MHz; note 1 20 −dB
f = 800 to 860 MHz 10 −dB
S22 output return losses f = 40 MHz; note 1 20 −dB
f = 800 to 860 MHz 10 −dB
d2second order distortion note 2 −−53 dB
Vooutput voltage dim =−60 dB; note 3 64 −dBmV
dim =−60 dB; note 4 63 −dBmV
F noise figure f = 50 MHz −8dB
f = 550 MHz −8dB
f = 650 MHz −8dB
f = 750 MHz −8dB
f = 860 MHz −8dB
I
tot total current consumption (DC) note 5 −450 mA