2001 Nov 01 6

Philips Semiconductors Product specification

860 MHz, 20 dB gain power doubler amplifier BGD904L

Fig.5 Composite triple beat as a function of

frequency under tilted conditions.

ZS=Z
L=75Ω; VB= 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MGS455
(2)
(3)
(4)
(1)

Fig.6 Cross modulation as a function of frequency

under tilted conditions.

ZS=Z
L=75Ω; VB= 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MGS456
(2)
(3)
(4)
(1)

Fig.7 Composite second order distortion as a

function of frequency under tilted

conditions.

ZS=Z
L=75Ω; VB= 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MGS457
(2)
(3)
(4)
(1)