2001 Nov 01 5

Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L

Fig.2 Composite triple beat as a function of

frequency under tilted conditions.

ZS=Z
L=75; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
50
60
80
90
70
52
48
40
36
44
400 600 800
MGS452
(1)
(1)
(2)
(3)
(4)
(2)
(3)
(4)
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. 3σ.

Fig.3 Cross modulation as a function of frequency

under tilted conditions.

ZS=Z
L=75; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
50
60
80
90
70
52
48
40
36
44
400 600 800
MGS453
(1)
(1)
(2)
(3)
(4)
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. 3σ.

Fig.4 Composite second order distortion as a

function of frequency under tilted

conditions.

ZS=Z
L=75; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
50
60
80
90
70
52
48
40
36
44
400 600 800
MGS454
(1)
(1)
(2)
(2)
(3)
(4) (4)
(3)
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. 3σ.