2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability
•Low DC current consumption.
APPLICATIONS
•CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a supply voltage of 24 V.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
Fig.1 Simplified outline.
handbook, halfpage
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 19.7 20.3 dB
f = 900 MHz 20.5 21.5 dB
Itot total current consumption (DC) VB= 24 V 350 380 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −70 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C