2001 Nov 01 4
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+f
q= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 691.25 MHz; Vq= 44 dBmV; measured at fp+f
q= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV; fq= 493.25 MHz; Vq= 44 dBmV; measured at fp+f
q= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=V
o
; fq= 858.25 MHz; Vq=V
o−6 dB;
fr= 860.25 MHz; Vr=V
o−6 dB; measured at fp+f
q−f
r= 849.25 MHz.
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=V
o
; fq= 747.25 MHz; Vq=V
o−6 dB; fr= 749.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=V
o
; fq= 547.25 MHz; Vq=V
o−6 dB; fr= 549.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
CSO composite second order
distortion 49 channels flat; Vo= 47 dBmV;
fm= 860.5 MHz −−69 −63 dB
77 channels flat; Vo= 44 dBmV;
fm= 548.5 MHz −−73 −68 dB
110 channels flat; Vo= 44 dBmV;
fm= 746.5 MHz −−69 −63 dB
129 channels flat; Vo= 44 dBmV;
fm= 860.5 MHz −−65 −59 dB
110 channels; fm= 150 MHz;
Vo= 49 dBmV at 550 MHz; note 1 −−68 −63 dB
129 channels; fm= 150 MHz;
Vo= 49.5 dBmV at 860 MHz; note 2 −−63 −58 dB
d2second order distortion note 3 −−82 −75 dB
note 4 −−83 −76 dB
note 5 −−83 −77 dB
Vooutput voltage dim =−60 dB; note 6 62.5 64 −dBmV
dim =−60 dB; note 7 63.5 65.5 −dBmV
dim =−60 dB; note 8 65.5 67.5 −dBmV
CTB compression = 1 dB;
129 channels flat; f = 859.25 MHz 47.5 48.5 −dBmV
CSO compression=1dB;
129 channels flat; f = 860.5 MHz 50 52 −dBmV
NF noise figure f = 50 MHz −3.8 5 dB
f = 550 MHz −4.1 5.5 dB
f = 750 MHz −4.8 6.5 dB
f = 900 MHz −5.9 7.5 dB
Itot total current consumption (DC) note 9 350 365 380 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT